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US6M1 PDF预览

US6M1

更新时间: 2024-02-25 06:53:44
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
8页 108K
描述
4V+2.5V Drive Nch+Nch MOSFET

US6M1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.68配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):1.4 A
最大漏极电流 (ID):1.4 A最大漏源导通电阻:0.38 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F6
JESD-609代码:e2湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Copper (Sn/Cu)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

US6M1 数据手册

 浏览型号US6M1的Datasheet PDF文件第2页浏览型号US6M1的Datasheet PDF文件第3页浏览型号US6M1的Datasheet PDF文件第4页浏览型号US6M1的Datasheet PDF文件第5页浏览型号US6M1的Datasheet PDF文件第6页浏览型号US6M1的Datasheet PDF文件第7页 
US6M1  
Transistors  
4V+2.5V Drive Nch+Nch MOSFET  
US6M1  
zStructure  
zDimensions (Unit : mm)  
Silicon N-channel / P-channel MOSFET  
TUMT6  
zFeatures  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (TUMT6).  
Abbreviated symbol : M01  
zApplication  
Power switching, DC / DC converter.  
zPackaging specifications  
zEquivalent circuit  
Package  
Taping  
TR  
(6)  
(5)  
(4)  
Type  
Code  
1  
Basic ordering unit (pieces)  
3000  
US6M1  
2  
2  
(1) Tr1 (Nch) Source  
(2) Tr1 (Nch) Gate  
(3) Tr2 (Pch) Drain  
(4) Tr2 (Pch) Source  
(5) Tr2 (Pch) Gate  
(6) Tr1 (Nch) Drain  
1  
(1)  
(2)  
(3)  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
zAbsolute maximum ratings (Ta=25°C)  
Limits  
Parameter  
Symbol  
Unit  
Tr1 : Nchannel Tr2 : Pchannel  
Drain-source voltage  
Gate-source voltage  
VDSS  
VGSS  
ID  
30  
20  
20  
12  
1
V
V
1.4  
5.6  
0.6  
5.6  
A
Continuous  
Pulsed  
Drain current  
1  
IDP  
4
A
IS  
0.4  
4  
A
Continuous  
Pulsed  
Source current  
(Body diode)  
1  
ISP  
A
W / TOTAL  
W / ELEMENT  
°C  
1
2  
Total power dissipation  
Channel temperature  
PD  
0.7  
150  
Tch  
Storage temperature  
1 Pw10µs, Duty cycle1%  
2 Mounted on a ceramic board.  
Tstg  
55 to +150  
°C  
zThermal resistance  
Parameter  
Symbol  
Limits  
Unit  
125  
179  
°C / W /TOTAL  
°C / W / ELEMENT  
Channel to ambient  
Rth (ch-a)∗  
2 Mounted on a ceramic board.  
Rev.B  
1/7  

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