Datasheet > US6T9_1

US6T9_1

更新时间： 2024-01-21 17:10:52

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
3页	109K
描述
General purpose amplification (−30V, −1A)

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中文翻译

获取价格

数据手册

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US6T9_1 数据手册

US6T9

Transistors

General purpose amplification (−30V, −1A)

US6T9

zDimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

zFeatures

1) Collector current is large.

2) Collector saturation voltage is low.

V^CE(sat)≤ −350mV

At I^C= −500mA / IB = −25mA

ROHM : TUMT6 Abbreviated symbol : T09

zEquivalent circuit

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

(6)

(5)

(4)

Collector-base voltage

VCBO

VCEO

VEBO

−30

−6

Collector-emitter voltage

Emitter-base voltage

−1

−2

Collector current

∗1

∗2

∗3

400

mW/TOTAL

W/TOTAL

WELEMENT

°C

Power dissipation

1.0

0.7

150

(1)

(2)

(3)

Junction temperature

Range of storage temperature

Tstg

−55 to +150

°C

∗1 Single pulse, PW=1ms

∗2 Each Terminal Mounted on a Recommended

∗3 Mounted on a 25mm×25mm× 0.8mm Ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BVCEO

BV^EBO

Min.

−30

−6

−

270

−

Typ.

Max.

−

Unit

Conditions

−

=−10µA

=−1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=−10µA

CBO

EBO

CE(sat)

−100

−350

680

−

MHz

CB=−30V

EB=−6V

Emitter cutoff current

−150

−

320

=−500mA, I =−25mA

Collector-emitter saturation voltage

DC current gain

∗

CE=−2V, I

C=−100mA

∗

CE=−2V, I

=100mA, f=100MHz

Transition frequency

CB=−10V, I

=0A, f=1MHz

Cob

−

Collector output capacitance

∗ Pulsed

Rev.B

1/2

12 3

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