US6X8
Transistors
General purpose amplification (30V, 1A)
US6X8
zExternal dimensions (Unit : mm)
zApplication
Low frequency amplifier
(4)
(5)
(6)
(3)
(2)
(1)
zFeatures
1) Collector current is large.
2) Collector saturation voltage is low.
VCE (sat) : max. 350mV
at Ic= 500mA / IB= 25mA
0.2
1.7
2.1
0.2
1pin mark
0.15Max.
ROHM : TUMT6 Abbreviated symbol : X08
zAbsolute maximum ratings (Ta=25°C)
zEquivalent Circuit
Parameter
Symbol
Limits
Unit
(6)
(5)
(4)
V
V
V
CBO
CEO
EBO
30
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
30
V
6
V
Tr1
Tr2
I
C
1
A
A
Collector current
∗
∗
1
2
I
CP
2
0.4
W/TOTAL
W/TOTAL
W/ELEMENT
°C
(1)
(2)
(3)
∗
3
3
Power dissipation
P
C
1.0
∗
0.7
Tj
150
Junction temperature
Range of storage temperature
Tstg
−55 to +150
°C
∗
1
2
3
Single pulse, P
W
=1ms
Each Terminal Mounted on a Recommended
∗
Mounted on a 25mm×25mm×t 0.8mm ceramic substrate
∗
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
30
30
6
−
−
−
−
−
−
−
V
V
I
I
I
C
=10µA
=1mA
Collector-emitter breakdown voltage BVCEO
C
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVEBO
−
V
E
=10µA
I
CBO
EBO
CE(sat)
FE
−
100
100
nA
nA
V
CB=30V
I
−
VEB=6V
Collector-emitter saturation voltage
DC current gain
V
−
120 350 mV
I
C
/I
B
=500mA/25mA
=2V/100mA
CE=2V, I =−100mA, f=100MHz
CB=10V, I =0A, f=1MHz
∗
∗
h
270
−
−
320
7
680
−
−
V
V
V
CE/IC
Transition frequency
f
T
MHz
pF
E
Collector output capacitance
Cob
−
−
E
∗ Pulsed
Rev.B
1/2