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US6X7 PDF预览

US6X7

更新时间: 2024-01-24 12:32:53
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
3页 70K
描述
General purpose amplification (12V, 1.5A)

US6X7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:13 weeks
风险等级:5.73最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:12 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):270JESD-30 代码:R-PDSO-F6
JESD-609代码:e2湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN COPPER端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):400 MHzBase Number Matches:1

US6X7 数据手册

 浏览型号US6X7的Datasheet PDF文件第2页浏览型号US6X7的Datasheet PDF文件第3页 
US6X7  
Transistors  
General purpose amplification (12V, 1.5A)  
US6X7  
zDimensions (Unit : mm)  
zApplication  
Low frequency amplifier  
zFeatures  
1) A collector current is large.  
2) Collector saturation voltage is low.  
VCE(sat) : max. 200mV  
at IC=500mA / IB = 25mA  
ROHM : TUMT6 Abbreviated symbol: X07  
zAbsolute maximum ratings (Ta=25°C)  
zEquivalent circuit  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
(6)  
(5)  
(4)  
VCBO  
VCEO  
VEBO  
15  
V
12  
V
6
V
A
I
C
1.5  
Collector current  
1
2
3
3
I
CP  
3
A
(1)  
(2)  
(3)  
400  
mW/Total  
W/Total  
W/Element∗  
Power dissipation  
P
C
1
0.7  
Junction temperature  
Tj  
150  
°C  
°C  
Range of storage temperature  
Tstg  
55 to +150  
1 Single pulse, P =1ms  
W
2 Each Terminal Mounted on a Recommended  
3 Mounted on a 25mm 25mm+ t0.8mm ceramic substrate  
+
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max. Unit  
Conditions  
Collector-base breakdown voltage  
BVCBO  
15  
12  
6
V
V
I
I
I
C
=10µA  
=1mA  
Collector-emitter breakdown voltage BVCEO  
C
Emitter-base breakdown voltage  
Collector cutoff current  
BVEBO  
V
E
=10µA  
I
CBO  
EBO  
CE(sat)  
FE  
100  
100  
nA  
nA  
V
CB=15V  
Emitter cutoff current  
I
VEB=6V  
Collector- emitter saturation voltage  
DC current gain  
V
85 200 mV  
I
C
/I  
B
=500mA/25mA  
=2V/200mA  
CE=2V, I = −200mA, f=100MHz  
CB=10V, I =0A, f=1MHz  
h
270  
680  
V
V
V
CE/IC  
Transition frequency  
f
T
400  
12  
MHz  
pF  
E
Collector output capacitance  
Cob  
E
Pulsed  
Rev.D  
1/2  

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