US6T8

更新时间： 2024-11-11 03:22:55

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
3页	71K
描述
General purpose amplification (−12V, −1.5A)

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中文翻译

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数据手册

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US6T8 数据手册

US6T8

Transistors

General purpose amplification (

−12V,

−1.5A)

US6T8

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

(4)

(5)

(6)

(3)

(2)

(1)

zFeatures

0.2

1.7

2.1

0.2

1pin mark

1) A collector current is large.

2) Collector saturation voltage is low.

−

V^{CE (sat)}≤ 200mV

0.15Max.

−

At I^C= 500mA / IB = 25mA

ROHM : TUMT6 Abbreviated symbol : T08

zEquivalent circuit

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

−15

−12

−6

Unit

(6)

(5)

(4)

VCBO

VCEO

VEBO

−1.5

−3

400

Collector current

∗1

∗2

∗3

mW/TOTAL

W/TOTAL

W/ELEMENT ^∗3

Power dissipation

1.0

0.7

(1)

(2)

(3)

Junction temperature

150

−55 to +150

°C

Range of storage temperature Tstg

∗1 Single pulse, Pw=1ms

∗2 Each Terminal Mounted on a Recommended

∗3 Mounted on a 25mm

25mm

0.8mm Ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BV^CEO

BV^EBO

Min.

−15

−12

−6

−

270

Typ.

−

−85

−

Max.

−

Unit

Conditions

Collector-base breakdown voltage

= −10µA

= −1mA

= −10µA

CB= −15V

EB= −6V

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

−

CBO

EBO

CE(sat)

−100

−200

680

−

Collector-emitter saturation voltage

DC current gain

= −500mA, I

= −25mA

= −200mA^∗

=200mA, f=100MHz

CE= −2V, I

∗

Transition frequency

−

400

MHz

CB= −10V, I

E=0A, f=1MHz

Corrector output capacitance

∗Pulsed

Cob

−

Rev.A

1/2

12 3

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