US6K2TR

更新时间： 2024-02-22 18:46:52

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
4页	78K
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中文翻译

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数据手册
替代型号

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US6K2TR 数据手册

US6K2

Transistors

4V Drive Nch+Nch MOSFET

US6K2

zStructure

zDimensions (Unit : mm)

Silicon N-channel MOSFET

TUMT6

zFeatures

1) Two Nch MOSFETs are put in TUMT6 package.

2) High-speed switching, Low On-resistance.

3) 4V drive.

Abbreviated symbol : K02

zApplications

Switching

zPackaging specifications

zInner circuit

(6)

(5)

(4)

Package

Taping

Type

Code

∗1

Basic ordering unit (pieces)

3000

US6K2

∗2

∗1

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Continuous

1.4

Drain current

Pulsed

∗1

I_DP

I_S

5.6

Source current

(Body diode)

Continuous

0.6

∗1

∗2

Pulsed

I_SP

5.6

W / TOTAL

W / ELEMENT

°C

1.0

Total power dissipation

P_D

0.7

Channel temperature

Tch

150

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Tstg

−55 to +150

°C

zThermal resistance

Parameter

Symbol

Limits

125

Unit

°C/W / TOTAL

°C/W / ELEMENT

∗

Channel to ambient

Rth(ch-a)

179

∗ Mounted on a ceramic board

Rev.B

1/3

12 3 4

中文翻译

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US6K2TR 替代型号

型号	品牌	替代类型	描述	数据表
US6M1TR	ROHM	功能相似	Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 2-Element, N-Channel, Silicon, Metal

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