Datasheet > US6K1_09

US6K1_09

更新时间： 2024-02-29 10:38:35

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
4页	187K
描述
2.5V Drive Nch+Nch MOSFET

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中文翻译

获取价格

数据手册

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US6K1_09 数据手册

2.5V Drive Nch+Nch MOSFET

US6K1

zStructure

zDimensions (Unit : mm)

Silicon N-channel MOSFET

TUMT6

zFeatures

1) Low On-resistance.

2) Space savingsmall surface mount package (TUMT6).

3) Low voltage drive (2.5V drive).

Abbreviated symbol : K01

zApplications

Switching

zPackaging specifications

zInner circuit

(6)

(5)

(4)

Package

Taping

Type

Code

Basic ordering unit (pieces)

3000

∗1

US6K1

∗2

∗1

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Symbol

Limits

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

Continuous

Pulsed

1.5

Drain current

∗1

I_DP

Source current

(Body diode)

Continuous

Pulsed

I_S

0.6

∗1

∗2

I_SP

1.0

W / TOTAL

W / ELEMENT

°C

Total power dissipation

P_D

0.7

Channel temperature

Tch

150

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Tstg

−55 to +150

°C

zThermal resistance

Parameter

Symbol

Limits

125

Unit

°C/W / TOTAL

°C/W / ELEMENT

∗

Channel to ambient

Rth(ch-a)

179

∗ Mounted on a ceramic board

www.rohm.com

2009.03 - Rev.B

1/3

12 3 4

中文翻译

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