UPA805T-KB-A

更新时间： 2024-02-20 19:37:00

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管微波
页数	文件大小	规格书
6页	58K
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中文翻译

获取价格

数据手册

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UPA805T-KB-A 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

µPA805T

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) MINI MOLD

FEATURES

PACKAGE DRAWINGS

•

Low Noise, High Gain

(Unit: m m )

Operable at Low Voltage

Sm all Feed-back Capacitance

C^re= 0.3 pF TYP.

2.1±0.1

1.25±0.1

•

Built-in 2 Transistors (2 × 2SC4958)

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

µPA805T

Loose products

(50 PCS)

Em bossed tape 8 m m wide. Pin 6 (Q1

Base), Pin 5 (Q2 Base), Pin 4 (Q2 Em itter)

face to perforation side of the tape.

µPA805T-T1

Taping products

(3 KPCS/Reel)

PIN CONFIGURATION (Top View )

Rem ark If you require an evaluation sam ple, please contact an NEC

Sales Representative. (Unit sam ple quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

Collector to Base Voltage

Collector to Em itter Voltage

Em itter to Base Voltage

Collector Current

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

4. Emitter (Q2)

5. Base (Q2)

6. Base (Q1)

m A

m W

3. Collector (Q2)

Total Power Dissipation

60 in 1 elem ent

Note

120 in 2 elem ents

J unction Tem perature

Storage Tem perature

150

˚C

Tstg

–65 to +150

Note 110 m W m ust not be exceeded in 1 elem ent.

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

The inform ation in this docum ent is subject to change w ithout notice.

Document No. ID-3639

(O.D. No. ID-9146)

Date Published April 1995 P

Printed in Japan

1995

12 3 4 5 6

中文翻译

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