UPA806

更新时间： 2024-01-04 03:25:39

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管微波
页数	文件大小	规格书
6页	50K
描述
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

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中文翻译

获取价格

数据手册

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UPA806 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

µPA806T

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) MINI MOLD

FEATURES

PACKAGE DRAWINGS

•

Low Noise, High Gain

(Unit: m m )

Operable at Low Voltage

Sm all Feed-back Capacitance

C^re= 0.4 pF TYP.

2.1±0.1

1.25±0.1

•

Built-in 2 Transistors (2 × 2SC4959)

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

µPA806T

Loose products

(50 PCS)

Em bossed tape 8 m m wide. Pin 6 (Q1

Base), Pin 5 (Q2 Base), Pin 4 (Q2 Em itter)

face to perforation side of the tape.

µPA806T-T1

Taping products

(3 KPCS/Reel)

PIN CONFIGURATION (Top View )

Rem ark If you require an evaluation sam ple, please contact an NEC

Sales Representative. (Unit sam ple quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

Collector to Base Voltage

Collector to Em itter Voltage

Em itter to Base Voltage

Collector Current

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

4. Emitter (Q2)

5. Base (Q2)

6. Base (Q1)

m A

m W

3. Collector (Q2)

Total Power Dissipation

150 in 1 elem ent

200 in 2 elem ents

Note

J unction Tem perature

Storage Tem perature

150

˚C

Tstg

–65 to +150

Note 110 m W m ust not be exceeded in 1 elem ent.

The inform ation in this docum ent is subject to change w ithout notice.

Document No. ID-3640

(O.D. No. ID-9147)

Date Published April 1995 P

Printed in Japan

1995

12 3 4 5 6

中文翻译

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与UPA806相关器件

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UPA806T	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI
UPA806T	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA806T	RENESAS	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
UPA806TKB	NEC	获取价格	2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
UPA806T-KB	RENESAS	获取价格	2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-6
UPA806T-KB-A	NEC	获取价格	暂无描述
UPA806TKB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN
UPA806T-T1	RENESAS	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
UPA806T-T1	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI
UPA806T-T1-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR