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UPA806T PDF预览

UPA806T

更新时间: 2024-02-09 00:41:49
品牌 Logo 应用领域
CEL 晶体晶体管光电二极管
页数 文件大小 规格书
10页 192K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

UPA806T 数据手册

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NPN SILICON HIGH  
FREQUENCY TRANSISTOR  
UPA806T  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
SMALL PACKAGE STYLE:  
2 NE685 Die in a 2 mm x 1.25 mm package  
PACKAGE OUTLINE S06  
(Top View)  
LOW NOISE FIGURE:  
NF = 1.5 dB TYP at 2 GHz  
2.1 ± 0.1  
1.25 ± 0.1  
HIGH GAIN:  
|S21E|2 = 8.5 dB TYP at 2 GHz  
HIGH GAIN BANDWIDTH: fT = 12 GHz  
1
6
5
0.65  
EXCELLENT LOW VOLTAGE, LOW CURRENT  
PERFORMANCE  
2.0 ± 0.2  
0.2 (All Leads)  
2
3
1.3  
4
DESCRIPTION  
0.9 ± 0.1  
NEC's UPA806T is two NPN high frequency silicon epitaxial  
transistors encapsulated in an ultra small 6 pin SMT package.  
Each transistor is independently mounted and easily config-  
ured for either dual transistor or cascode operation. The high  
fT, low voltage bias and small size make this device suited for  
various hand-held wireless applications.  
0.7  
+0.10  
- 0.05  
0.15  
0 ~ 0.1  
PIN OUT  
1. Collector Transistor 1  
2. Emitter Transistor 1  
3. Collector Transistor 2  
4. Emitter Transistor 2  
5. Base Transistor 2  
6. Base Transistor 1  
Note:  
Pin 3 is identified with a circle on the bottom of the package.  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
UPA806T  
S06  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
µA  
MIN  
TYP  
MAX  
0.1  
ICBO  
IEBO  
Collector Cutoff Current at VCB = 5 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
µA  
0.1  
1
hFE  
Forward Current Gain at VCE = 3 V, IC = 10 mA  
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz  
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz  
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz  
75  
100  
12  
150  
fT  
GHz  
pF  
Cre2  
|S21E|2  
NF  
0.4  
8.5  
1.5  
0.7  
2.5  
dB  
7
dB  
hFE1 = Smaller Value of Q1, or Q2  
hFE Ratio:  
hFE1/hFE2  
0.85  
hFE2 = Larger Value of Q1 or Q2  
Notes: 1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.  
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.  
For Tape and Reel version use part number UPA806T-T1, 3K per reel.  
California Eastern Laboratories  

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