Datasheet > TSM4946D

TSM4946D

更新时间： 2024-11-11 08:33:27

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	243K
描述
60V Dual N-Channel MOSFET

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TSM4946D 数据手册

TSM4946D

60V Dual N-Channel MOSFET

PRODUCT SUMMARY

SOP-8

Pin Definition:

1. Source 1

2. Gate 1

3. Source 2

4. Gate 2

8. Drain 1

7. Drain 1

6. Drain 2

5. Drain 2

V_DS(V)

R_DS(on)(mΩ)

55 @ V_GS= 10V

75 @ V_GS= 4.5V

I_D(A)

4.5

3.9

Features

Block Diagram

●

Advance Trench Process Technology

High Density Cell Design for Ultra Low On-resistance

Application

●

High-Side DC/DC Conversion

Notebook

Sever

Ordering Information

Part No.

Package

Packing

Dual N-Channel MOSFET

TSM4946DCS RL

TSM4946DCS RLG

SOP-8

2.5Kpcs / 13” Reel

Note: “G” denote for Green Product

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V_DS

V_GS

I_D

Gate-Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a,b

4.5

I_DM

I_S

2.4

Ta = 25^oC

Ta = 75^oC

Maximum Power Dissipation

P_D

1.7

Operating Junction Temperature

T_J

+150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

- 55 to +150

Thermal Performance

Parameter

Symbol

RӨ_JF

Limit

Unit

^oC/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance (PCB mounted)

Notes:

RӨ_JA

62.5

a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on FR4 Board, t ≤ 10 sec.

1/1

Version: A09

12 3 4 5 6

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