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TSAL4400-ASZ PDF预览

TSAL4400-ASZ

更新时间: 2024-09-09 12:57:59
品牌 Logo 应用领域
威世 - VISHAY 半导体红外LED光电二极管
页数 文件大小 规格书
5页 84K
描述
Infrared LED, 940nm

TSAL4400-ASZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:unknown
风险等级:5.67最大正向电流:0.1 A
最大正向电压:1.6 VJESD-609代码:e3
安装特点:THROUGH HOLE MOUNT最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:INFRARED LED
峰值波长:940 nm最大反向电压:5 V
半导体材料:GaAs/GaAIAs光谱带宽:5e-8 m
子类别:Infrared LEDs表面贴装:NO
端子面层:Matte Tin (Sn)视角:50 deg
Base Number Matches:1

TSAL4400-ASZ 数据手册

 浏览型号TSAL4400-ASZ的Datasheet PDF文件第2页浏览型号TSAL4400-ASZ的Datasheet PDF文件第3页浏览型号TSAL4400-ASZ的Datasheet PDF文件第4页浏览型号TSAL4400-ASZ的Datasheet PDF文件第5页 
TSAL4400  
Vishay Telefunken  
GaAs/GaAlAs IR Emitting Diode in ø 3 mm (T–1)  
Package  
94 8488  
Description  
TSAL4400 is a high efficiency infrared emitting diode  
in GaAlAs on GaAs technology, molded in clear, blue-  
grey tinted plastic packages.  
In comparison with the standard GaAs on GaAs  
technology these emitters achieve about 100 % ra-  
diant power improvement at a similar wavelength.  
The forward voltages at low current and at high pulse  
current roughly correspond to the low values of the  
standard technology. Therefore these emitters are  
ideally suitable as high performance replacements of  
standard emitters.  
Features  
Extra high radiant power  
Low forward voltage  
Suitable for high pulse current operation  
Standard T–1 (ø 3 mm) package  
Angle of half intensity ϕ = ± 25  
Peak wavelength = 940 nm  
p
High reliability  
Good spectral matching to Si photodetectors  
Applications  
Infrared remote control units  
Free air transmission systems  
Infrared source for optical counters and card readers  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Reverse Voltage  
Test Conditions  
Symbol  
Value  
5
Unit  
V
V
R
Forward Current  
I
100  
200  
1.5  
210  
mA  
mA  
A
mW  
C
C
C
C
K/W  
F
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
t /T = 0.5, t = 100 s  
t = 100 s  
p
I
FM  
p
p
I
FSM  
P
T
V
100  
j
T
–55...+100  
–55...+100  
260  
amb  
T
stg  
t
5sec, 2 mm from case  
T
sd  
R
350  
thJA  
Document Number 81006  
Rev. 3, 20-May-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  

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