Datasheet > TSAL4400-RSZ

TSAL4400-RSZ

更新时间： 2024-09-09 19:05:23

品牌	Logo	应用领域
威世 - VISHAY		光电
页数	文件大小	规格书
5页	108K
描述
Infrared LED,

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中文翻译

获取价格

技术参数
数据手册

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TSAL4400-RSZ 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.64
光电设备类型：	INFRARED LED	Base Number Matches：	1

TSAL4400-RSZ 数据手册

TSAL4400

Vishay Semiconductors

www.vishay.com

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

FEATURES

• Package type: leaded

• Package form: T-1

• Dimensions (in mm): Ø 3

• Peak wavelength: λ_p= 940 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = 25°

94 8636

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Package matches with detector TEFT4300

DESCRIPTION

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs,

MQW technology with high radiant power molded in a

blue-gray plastic package.

APPLICATIONS

• Infrared remote control units

• Free air transmission systems

• Infrared source for optical counters and card readers

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

ϕ (deg)

λ_p(nm)

t_r(ns)

TSAL4400

940

Note

•

Test conditions see table “Basic Characteristics“

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TSAL4400

Bulk

MOQ: 5000 pcs, 5000 pcs/bulk

MOQ: 8000 pcs, 2000 pcs/box

T-1

TSAL4400-RSZ

Ammopack

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

100

Forward current

I_F

Peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p= 100 μs

t_p= 100 μs

I_FM

200

I_FSM

P_V

1.5

160

°C

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

T_j

100

T_amb

T_stg

T_sd

-40 to +85

-40 to +100

260

°C

t ≤ 5 s, 2 mm from case

°C

Thermal resistance junction / ambient J-STD-051, leads 7 mm, soldered on PCB

R_thJA

300

K/W

Rev. 1.9, 03-Nov-16

Document Number: 81006

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与TSAL4400-RSZ相关器件

型号	品牌	获取价格	描述	数据表
TSAL5100	VISHAY	获取价格	GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
TSAL5100_08	VISHAY	获取价格	High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
TSAL5100_09	VISHAY	获取价格	High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL5100-ASZ	VISHAY	获取价格	Infrared LED, LAMP,IRED,940NM PEAK WAVELENGTH,LED-2B
TSAL5100-MSZ	VISHAY	获取价格	Infrared LED, LAMP,IRED,940NM PEAK WAVELENGTH,LED-2B
TSAL5300	VISHAY	获取价格	GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
TSAL5300_08	VISHAY	获取价格	High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
TSAL5300_09	VISHAY	获取价格	High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL5300-ASZ	VISHAY	获取价格	Infrared LED, 940nm
TSAL5300-FSZ	VISHAY	获取价格	High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

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