Datasheet > TSAL6102

TSAL6102

更新时间： 2024-09-10 14:52:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	106K
描述
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TSAL6102 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
HTS代码：	8541.40.20.00	风险等级：	5.6
光电设备类型：	INFRARED LED	Base Number Matches：	1

TSAL6102 数据手册

TSAL6102

Vishay Semiconductors

www.vishay.com

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Peak wavelength: _p= 940 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:  = 10°

94 8389

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

APPLICATIONS

TSAL6102 is an infrared, 940 nm emitting diode in GaAlAs

multi quantum well (MQW) technology with high radiant

power and high speed molded in a blue-gray plastic

package.

• Infrared remote control units with high power

requirements

• Free air transmission systems

• Infrared source for optical counters and card readers

• IR source for smoke detectors

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

 (deg)

_p(nm)

t_r(ns)

TSAL6102

220

940

Note

•

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

Bulk

REMARKS

MOQ: 4000 pcs, 4000 pcs/bulk

PACKAGE FORM

TSAL6102

T-1¾

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

100

Forward current

I_F

Peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p= 100 μs

t_p= 100 μs

I_FM

200

I_FSM

P_V

1.5

160

°C

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

Thermal resistance junction/ambient

T_j

100

T_amb

T_stg

T_sd

-40 to +85

-40 to +100

260

°C

t  5 s, 2 mm from case

°C

J-STD-051, leads 7 mm soldered on PCB

R_thJA

230

K/W

Rev. 1.0, 27-Aug-15

Document Number: 84337

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与TSAL6102相关器件

型号	品牌	获取价格	描述	数据表
TSAL6200	VISHAY	获取价格	High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
TSAL6200	TEMIC	获取价格	Infrared LED, 5mm, 1-Element, 940nm, PLASTIC, 2 PIN
TSAL6200_08	VISHAY	获取价格	High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
TSAL6200_09	VISHAY	获取价格	High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL6400	VISHAY	获取价格	High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
TSAL6400_08	VISHAY	获取价格	High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
TSAL6400_09	VISHAY	获取价格	High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL6400-ASZ	VISHAY	获取价格	Infrared LED, LAMP,IRED,940NM PEAK WAVELENGTH,LED-2B
TSAL6400-MSZ	VISHAY	获取价格	暂无描述
TSAL7200	VISHAY	获取价格	GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package

与TSAL6102相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

64
AIC1781A 电池充电控制器深度解析
2024-09-03

53
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

85
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

96

产品中心

服务支持

精选活动

关于我们

帮助中心

TSAL6102

TSAL6102 技术参数

TSAL6102 数据手册

与TSAL6102相关器件

与TSAL6102相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TSAL6102

TSAL6102 技术参数

TSAL6102 数据手册

与TSAL6102相关器件

与TSAL6102相关文章

您还可以找

您在本页遇到什么问题？