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TSAL7400

更新时间: 2024-11-28 22:41:59
品牌 Logo 应用领域
威世 - VISHAY 半导体红外LED光电二极管
页数 文件大小 规格书
5页 79K
描述
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package

TSAL7400 数据手册

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TSAL7400  
Vishay Telefunken  
GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1 )  
Package  
94 8389  
Description  
TSAL7400 is a high efficiency infrared emitting diode  
in GaAlAs on GaAs technology, molded in clear plastic  
packages.  
In comparison with the standard GaAs on GaAs  
technology these emitters achieve more than 100 %  
radiant power improvement at a similar wavelength.  
The forward voltages at low current and at high pulse  
current roughly correspond to the low values of the  
standard technology. Therefore these emitters are  
ideally suitable as high performance replacements of  
standard emitters.  
Features  
Extra high radiant power and radiant intensity  
High reliability  
Low forward voltage  
Suitable for high pulse current operation  
Standard T–1 (ø 5 mm) package  
Angle of half intensity ϕ = ± 25  
Peak wavelength = 940 nm  
p
Good spectral matching to Si photodetectors  
Applications  
Infrared remote control units with high power requirements  
Free air transmission systems  
Infrared source for optical counters and card readers  
IR source for smoke detectors  
Absolute Maximum Ratings  
T
amb  
= 25 C  
Parameter  
Reverse Voltage  
Forward Current  
Test Conditions  
Symbol  
Value  
5
100  
200  
1.5  
Unit  
V
R
V
mA  
mA  
A
mW  
C
C
C
C
K/W  
I
F
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
Thermal Resistance Junction/Ambient  
t /T = 0.5, t = 100 s  
I
FM  
p
p
t = 100 s  
I
p
FSM  
P
V
210  
100  
–55...+100  
–55...+100  
260  
T
j
T
amb  
T
stg  
t
5sec, 2 mm from case  
T
sd  
R
thJA  
350  
Document Number 81014  
Rev. 3, 20-May-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  

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