5秒后页面跳转
TSAL5300-GSZ PDF预览

TSAL5300-GSZ

更新时间: 2024-09-09 05:55:31
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
8页 292K
描述
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

TSAL5300-GSZ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.83
最大正向电流:0.1 A最大正向电压:1.6 V
安装特点:THROUGH HOLE MOUNT最高工作温度:110 °C
最低工作温度:-55 °C峰值波长:940 nm
最大反向电压:5 V半导体材料:GaAs/GaAIAs
光谱带宽:5e-8 m子类别:Infrared LEDs
表面贴装:NO视角:44 deg

TSAL5300-GSZ 数据手册

 浏览型号TSAL5300-GSZ的Datasheet PDF文件第2页浏览型号TSAL5300-GSZ的Datasheet PDF文件第3页浏览型号TSAL5300-GSZ的Datasheet PDF文件第4页浏览型号TSAL5300-GSZ的Datasheet PDF文件第5页浏览型号TSAL5300-GSZ的Datasheet PDF文件第6页浏览型号TSAL5300-GSZ的Datasheet PDF文件第7页 
TSAL5300  
Vishay Semiconductors  
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs  
Description  
TSAL5300 is a high efficiency infrared emitting diode  
in GaAs technology, molded in clear, bluegrey tinted  
plastic packages.  
96 11505  
Features  
Applications  
Extra high radiant power and radiant intensity  
Infrared remote control units with high power require-  
ments  
• Low forward voltage  
Free air transmission systems  
Infrared source for optical counters and card readers  
IR source for smoke detectors  
• Suitable for high pulse current operation  
• Standard T-1¾ (5 mm) package  
• Angle of half intensity ϕ = ꢀꢀ°  
• Peak wavelength λp = 940 nm  
• High reliability  
eꢀ  
• Good spectral matching to Si photodetectors  
• Lead (Pb)-free component  
• Component in accordance to ELV ꢀ000/53/EC,  
RoHS ꢀ00ꢀ/95/EC and WEEE ꢀ00ꢀ/96/EC  
Parts Table  
Part  
Ordering Code  
TSAL5300  
Remarks  
TSAL 5300  
TSAL 5300  
TSAL 5300  
MOQ 4000 pc (Bulk)  
TSAL5300-FSZ  
TSAL5300-GSZ  
MOQ 5000 pc (1000 pc / Ammopack)  
MOQ 5000 pc (1000 pc / Ammopack)  
Absolute Maximum Ratings  
T
= ꢀ5 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Symbol  
Value  
5
Unit  
V
Reverse Voltage  
V
R
Forward current  
I
100  
ꢀ00  
mA  
mA  
A
F
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
t /T = 0.5, t = 100 µs  
I
FM  
p
p
t = 100 µs  
I
1.5  
p
FSM  
P
ꢀ10  
mW  
°C  
V
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature  
T
100  
j
T
- 55 to + 100  
- 55 to + 100  
ꢀ60  
°C  
amb  
T
°C  
stg  
t 5 sec, ꢀ mm from case  
T
°C  
sd  
Thermal Resistance Junction/  
Ambient  
R
350  
K/W  
thJA  
Document Number 81008  
Rev. 1.7, 08-Mar-05  
www.vishay.com  
1

与TSAL5300-GSZ相关器件

型号 品牌 获取价格 描述 数据表
TSAL5300-MSZ VISHAY

获取价格

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
TSAL6100 VISHAY

获取价格

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
TSAL6100_08 VISHAY

获取价格

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
TSAL6100_09 VISHAY

获取价格

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL6100-MSZ VISHAY

获取价格

Infrared LED, LAMP,IRED,940NM PEAK WAVELENGTH,LED-2B
TSAL6100UL VISHAY

获取价格

Infrared LED
TSAL6102 VISHAY

获取价格

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
TSAL6200 VISHAY

获取价格

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
TSAL6200 TEMIC

获取价格

Infrared LED, 5mm, 1-Element, 940nm, PLASTIC, 2 PIN
TSAL6200_08 VISHAY

获取价格

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs