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TSAL5100_08 PDF预览

TSAL5100_08

更新时间: 2024-09-09 05:52:47
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 111K
描述
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

TSAL5100_08 数据手册

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TSAL5100  
Vishay Semiconductors  
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm,  
GaAlAs/GaAs  
FEATURES  
• Package type: leaded  
• Package form: T-1¾  
• Dimensions (in mm): 5  
• Leads with stand-off  
• Peak wavelength: λp = 940 nm  
• High reliability  
• High radiant power  
• High radiant intensity  
96 11505  
• Angle of half intensity: ϕ = 10°  
• Low forward voltage  
• Suitable for high pulse current operation  
• Good spectral matching with Si photodetectors  
DESCRIPTION  
• Lead (Pb)-free component in accordance with  
TSAL5100 is an infrared, 940 nm emitting diode in  
GaAlAs/GaAs technology with high radiant power, molded in  
a blue-gray plastic package.  
RoHS 2002/95/EC and WEEE 2002/96/EC  
APPLICATIONS  
• Infrared remote control units with high power reqirements  
• Free air transmission systems  
• Infrared source for optical counters and card readers  
• IR source for smoke detectors  
• Smoke-automatic fire detectors  
PRODUCT SUMMARY  
COMPONENT  
Ie (mW/sr)  
ϕ (deg)  
λ
P (nm)  
tr (ns)  
TSAL5100  
130  
10  
940  
800  
Note  
Test conditions see table “Basic Characteristics“  
ORDERING INFORMATION  
ORDERING CODE  
PACKAGING  
Bulk  
REMARKS  
PACKAGE FORM  
TSAL5100  
MOQ: 4000 pcs, 4000 pcs/bulk  
T-1¾  
Note  
MOQ: minimum order quantity  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
5
UNIT  
V
Reverse voltage  
VR  
IF  
Forward current  
100  
200  
1.5  
mA  
mA  
A
Peak forward current  
Surge forward current  
Power dissipation  
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
IFM  
IFSM  
PV  
Tj  
160  
100  
mW  
°C  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tamb  
Tstg  
Tsd  
- 40 to + 85  
- 40 to + 100  
260  
°C  
°C  
t 5 s, 2 mm from case  
°C  
J-STD-051, leads 7 mm soldered  
on PCB  
Thermal resistance junction/ambient  
RthJA  
230  
K/W  
Note  
amb = 25 °C, unless otherwise specified  
T
www.vishay.com  
90  
For technical questions, contact: emittertechsupport@vishay.com  
Document Number: 81007  
Rev. 1.5, 04-Sep-08  

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