5秒后页面跳转
捷配首页

Datasheet > TPCP8003-H
TPCP8003-H PDF预览

TPCP8003-H

更新时间： 2024-11-10 03:26:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 249K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

阅读下载

中文翻译

获取价格

TPCP8003-H 技术参数

生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PDSO-F8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.34
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (ID)：2.2 A最大漏源导通电阻：0.19 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F8
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

TPCP8003-H 数据手册

 浏览型号TPCP8003-H的Datasheet PDF文件第2页浏览型号TPCP8003-H的Datasheet PDF文件第3页浏览型号TPCP8003-H的Datasheet PDF文件第4页浏览型号TPCP8003-H的Datasheet PDF文件第5页浏览型号TPCP8003-H的Datasheet PDF文件第6页浏览型号TPCP8003-H的Datasheet PDF文件第7页 
TPCP8003-H  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)  
TPCP8003-H  
High Efficiency DC／DC Converter Applications  
Unit: mm  
Notebook PC Applications  
0.33±0.05  
A
M
0.05  
5
8
Portable Equipment Applications  
•
•
•
•
•
•
•
Small footprint due to a small and thin package  
High speed switching  
0.475  
1
4
B
B
M
0.05  
0.65  
Small gate charge: Q  
= 7.5 nC (typ.)  
SW  
2.9±0.1  
A
Low drain-source ON-resistance: R  
= 130 mΩ (typ.)  
DS (ON)  
0.8±0.05  
High forward transfer admittance: |Y | = 5.4 S (typ.)  
fs  
S
0.025  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
Low leakage current: I  
= 10 μA (max) (V  
= 100V)  
DSS  
DS  
Enhancement mode: V = 1.1 to 2.3 V (V  
= 10 V, I = 1mA)  
D
th  
DS  
+0.13  
-0.12  
1.12  
1.12  
+0.13  
-0.12  
Absolute Maximum Ratings (Ta = 25°C)  
+0.1  
-0.11  
0.28  
1．Source  
2．Source  
3．Source  
4．Gate  
5．Drain  
6．Drain  
7．Drain  
8．Drain  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
100  
100  
±20  
2.2  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
JEDEC  
JEITA  
―
―
DGR  
GS  
V
GSS  
DC  
(Note 1)  
I
D
TOSHIBA  
2-3V1K  
Drain current  
A
Pulsed (Note 1)  
I
8.8  
DP  
Weight: 0.017 g (typ.)  
Drain power dissipation  
Drain power dissipation  
(t = 5 s)  
(Note 2a)  
(t = 5 s)  
P
1.68  
0.84  
W
W
D
D
Circuit Configuration  
8
7
6
5
P
(Note 2b)  
Single-pulse avalanche energy  
(Note 3)  
E
3.93  
2.2  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.016  
mJ  
AR  
(Tc=25℃) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
1
2
3
4
−55 to 150  
Storage temperature range  
stg  
8
7
6
5
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.)  
are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
8003H  
※
1
2
3
4
This transistor is an electrostatic-sensitive device. Handle with care.  
Lot No.  
1
2007-06-22  
1234567

中文翻译

下载PDF

与TPCP8003-H相关器件

型号 品牌 获取价格 描述 数据表
TPCP8003-H(TE85L) TOSHIBA

获取价格

 		TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,2.2A I(D),TSOP
TPCP8004 TOSHIBA

获取价格

 		Field Effect Transistor Silicon N Channel MOS
TPCP8004(TE85L,F) TOSHIBA

获取价格

 		MOSFET N-CH 30V 8.3A PS-8
TPCP8005-H TOSHIBA

获取价格

 		High-Effciency DC/DC Converter Applications Notebook PC Applications Portable Equipment Ap
TPCP8005-H(TE85L,F) TOSHIBA

获取价格

 		TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,11A I(D),TSOP
TPCP8005-H(TE85LF) TOSHIBA

获取价格

 		Small Signal Field-Effect Transistor
TPCP8006 TOSHIBA

获取价格

 		Notebook PC Applications Portable Equipment Applications
TPCP8006(TE85L) TOSHIBA

获取价格

 		TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,9.1A I(D),TSOP
TPCP8006(TE85L,F) TOSHIBA

获取价格

 		TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,9.1A I(D),TSOP
TPCP8006_1 TOSHIBA

获取价格

 		Notebook PC Applications Portable Equipment Applications

与TPCP8003-H相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证