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TPCP8003-H(TE85L) PDF预览

TPCP8003-H(TE85L)

更新时间： 2024-11-10 20:11:23
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 230K
描述
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,2.2A I(D),TSOP

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中文翻译

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TPCP8003-H(TE85L) 技术参数

是否Rohs认证： 不符合生命周期：Lifetime Buy
包装说明：,Reach Compliance Code：unknown
风险等级：5.84配置：Single
最大漏极电流 (Abs) (ID)：2.2 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1.68 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

TPCP8003-H(TE85L) 数据手册

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TPCP8003-H  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)  
TPCP8003-H  
High Efficiency DC／DC Converter Applications  
Unit: mm  
Notebook PC Applications  
0.33±0.05  
A
M
0.05  
5
8
Portable Equipment Applications  
•
•
•
•
•
•
•
Small footprint due to a small and thin package  
High speed switching  
0.475  
1
4
B
B
M
0.05  
0.65  
Small gate charge: Q  
= 7.5 nC (typ.)  
SW  
2.9±0.1  
A
Low drain-source ON-resistance: R  
= 130 mΩ (typ.)  
DS (ON)  
0.8±0.05  
High forward transfer admittance: |Y | = 5.4 S (typ.)  
fs  
S
0.025  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
Low leakage current: I  
= 10 μA (max) (V  
= 100V)  
DSS  
DS  
Enhancement mode: V = 1.1 to 2.3 V (V  
= 10 V, I = 1mA)  
D
th  
DS  
+0.13  
-0.12  
1.12  
1.12  
+0.13  
-0.12  
Absolute Maximum Ratings (Ta = 25°C)  
+0.1  
-0.11  
0.28  
1．Source  
2．Source  
3．Source  
4．Gate  
5．Drain  
6．Drain  
7．Drain  
8．Drain  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
100  
100  
±20  
2.2  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
JEDEC  
JEITA  
―
―
DGR  
GS  
V
GSS  
DC  
(Note 1)  
I
D
TOSHIBA  
2-3V1K  
Drain current  
A
Pulsed (Note 1)  
I
8.8  
DP  
Weight: 0.017 g (typ.)  
Drain power dissipation  
Drain power dissipation  
(t = 5 s)  
(Note 2a)  
(t = 5 s)  
P
1.68  
0.84  
W
W
D
D
Circuit Configuration  
8
7
6
5
P
(Note 2b)  
Single-pulse avalanche energy  
(Note 3)  
E
3.93  
2.2  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.016  
mJ  
AR  
(Tc=25℃) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
1
2
3
4
−55 to 150  
Storage temperature range  
stg  
8
7
6
5
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.)  
are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
8003H  
※
1
2
3
4
This transistor is an electrostatic-sensitive device. Handle with care.  
Lot No.  
1
2007-06-22  
1234567

中文翻译

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