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TPCP8004(TE85L,F) PDF预览

TPCP8004(TE85L,F)

更新时间: 2024-09-21 19:51:35
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 288K
描述
MOSFET N-CH 30V 8.3A PS-8

TPCP8004(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:4.83
Base Number Matches:1

TPCP8004(TE85L,F) 数据手册

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TPCP8004  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)  
TPCP8004  
Unit: mm  
Notebook PC Applications  
0.33 ± 0.05  
Portable Equipment Applications  
M
A
5
0.05  
8
Small footprint due to a small and thin package  
High speed switching  
0.475  
1
4
B
M
B
0.05  
Small gate charge: Qg = 26nC (typ.)  
0.65  
2.9 ± 0.1  
A
Low drain-source ON-resistance: R  
= 7mΩ(typ.)  
DS(ON)  
0.8 ± 0.05  
0.1  
High forward transfer admittance: |Y | = 21S (typ.)  
fs  
S
0.025  
0.17 ± 0.02  
S
0.28  
Low leakage current: I  
= 10μA (max) (V = 30V)  
DS  
0.11  
DSS  
Enhancement mode: V = 1.3 to 2.5V (V = 10V, I = 1mA)  
0.13  
0.12  
th  
DS  
D
1.12  
1.12  
0.13  
0.12  
Absolute Maximum Ratings (Ta=25°C)  
0.1  
0.11  
0.28  
1,2,3 SOURCE  
GATE  
5,6,7,8DRAIN  
Characteristics  
Symbol  
Rating  
Unit  
4
V
30  
30  
V
V
V
Drain-source voltage  
DSS  
JEDEC  
V
Drain-gate voltage (R =20 kΩ)  
DGR  
GS  
JEITA  
V
±20  
8.3  
33.2  
Gate-source voltage  
GSS  
TOSHIBA  
2-3V1K  
DC (Note 1)  
Drain current  
I
D
A
I
Pulse (Note 1)  
Weight: 0.017g(typ.)  
DP  
W
Drain power dissipation  
(t = 5 s)  
(Note 2a)  
(t = 5 s)  
Circuit Configuration  
P
1.68  
0.84  
D
8
7
6
5
W
Drain power dissipation  
P
D
(Note 2b)  
Single-pulse avalanche energy  
(Note 3)  
E
I
17.9  
8.3  
mJ  
A
AS  
Avalanche current  
AR  
Repetitive avalanche energy  
E
0.021  
mJ  
AR  
(Note 4)  
Channel temperature  
T
150  
°C  
°C  
ch  
1
2
3
4
Storage temperature range  
T
stg  
55 to 150  
Marking (Note 5)  
8
7
6
5
Note: For Notes 1 to 5, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.)  
are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
8004  
1
2
3
4
Lot No.  
This transistor is an electrostatic-sensitive device. Handle with care.  
Start of commercial production  
2007-07  
1
2013-11-01  

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