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TPCP8007-H

更新时间： 2024-09-21 21:16:35
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
7页 176K
描述
TRANSISTOR 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-3V1K, 8 PIN, FET General Purpose Small Signal

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中文翻译

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TPCP8007-H 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
包装说明：SMALL OUTLINE, R-PDSO-F8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.76配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (ID)：5 A
最大漏源导通电阻：0.064 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：40 pFJESD-30 代码：R-PDSO-F8
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

TPCP8007-H 数据手册

 浏览型号TPCP8007-H的Datasheet PDF文件第2页浏览型号TPCP8007-H的Datasheet PDF文件第3页浏览型号TPCP8007-H的Datasheet PDF文件第4页浏览型号TPCP8007-H的Datasheet PDF文件第5页浏览型号TPCP8007-H的Datasheet PDF文件第6页浏览型号TPCP8007-H的Datasheet PDF文件第7页 
TPCP8007-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)  
TPCP8007-H  
Switching Regulator Applications  
Motor Drive Applications  
Unit: mm  
DC-DC Converter Applications  
•
•
•
•
Small footprint due to a small and thin package  
High-speed switching  
Small gate charge: Q  
= 2.7 nC (typ.)  
SW  
Low drain-source ON-resistance:  
= 40 mΩ (typ.)  
R
DS (ON)  
•
•
•
High forward transfer admittance: |Y | = 16 S (typ.)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 60 V)  
DSS  
DS  
Enhancement mode: V = 1.3 to 2.3 V (V  
= 10 V, I = 0.1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
60  
60  
±20  
5
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
V
GSS  
JEDEC  
JEITA  
⎯
⎯
DC  
(Note 1)  
I
D
Drain current  
A
Pulsed (Note 1)  
I
20  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 5 s)  
(Note 2a)  
TOSHIBA  
2-3V1K  
P
1.68  
0.84  
W
W
D
D
Weight: 0.017g (typ.)  
(t = 5 s)  
(Note 2b)  
P
Single-pulse avalanche energy  
(Note 3)  
E
9
5
mJ  
A
AS  
Circuit Configuration  
Avalanche current  
I
AR  
8
7
6
5
Repetitive avalanche energy  
E
0.05  
mJ  
AR  
(Tc = 25℃) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
−55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 5, refer to the next page.  
1
2
3
4
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability  
Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Marking (Note 5)  
8007H  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-08-12  
1234567

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