Datasheet > TPCA8104(TE12L)

TPCA8104(TE12L)

更新时间： 2024-11-26 10:25:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	217K
描述
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,40A I(D),SO

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TPCA8104(TE12L) 技术参数

是否Rohs认证：	不符合	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	配置：	Single
最大漏极电流 (Abs) (ID)：	40 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	45 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

TPCA8104(TE12L) 数据手册

TPCA8104

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)

TPCA8104

High-Side Switching Applications

Unit: mm

Portable Equipment Applications

0.4±0.1

1.27

0.5±0.1

0.05

M A

•

Small footprint due to small and thin package

Low drain-source ON-resistance: R = 11 mΩ (typ.)

DS (ON)

0.15±0.05

High forward transfer admittance:|Y | = 50 S (typ.)

Low leakage current: I

= -10 μA (max) (V

= -60 V)

DSS

0.595

Enhancement mode: V = -0.8 to -2.0 V (V

= -10 V, I = -1 mA)

5.0±0.2

0.95±0.05

0.166±0.05

0.05

1.1±0.2

4.25±0.2

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

0.8±0.1

-60

±20

-40

-120

DSS

1, 2, 3: Source

5, 6, 7, 8: Drain

4: Gate

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

JEDEC

JEITA

―

Drain current

Pulse

(Note 1)

TOSHIBA

2-5Q1A

Drain power dissipation (Tc = 25°C)

Drain power dissipation (t = 10 s)

Weight: 0.080 g (typ.)

2.8

1.6

(Note 2a)

Drain power dissipation (t = 10 s)

(Note 2b)

Circuit Configuration

Single-pulse avalanche energy

(Note 3)

116

-40

4.5

Avalanche current

Repetitive avalanche energy

(Tc = 25°C) (Note 4)

Channel temperature

150

°C

Storage temperature range

−55 to 150

stg

Note: For Notes 1 to 4, see the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

2010-01-05

12 3 4 5 6 7

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与TPCA8104(TE12L)相关器件

型号	品牌	获取价格	描述	数据表
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TPCA8105(TE12L1)	TOSHIBA	获取价格	暂无描述
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