Datasheet > TPCA8121

TPCA8121

更新时间： 2024-01-20 17:31:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	235K
描述
MOSFETs Silicon P-Channel MOS (U-MOS)

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技术参数
数据手册

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TPCA8121 技术参数

生命周期：	Not Recommended	包装说明：	SMALL OUTLINE, S-PDSO-F5
Reach Compliance Code：	unknown	风险等级：	5.75
雪崩能效等级（Eas）：	263 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	45 A	最大漏源导通电阻：	0.004 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	S-PDSO-F5
元件数量：	1	端子数量：	5
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	SQUARE	封装形式：	SMALL OUTLINE
极性/信道类型：	P-CHANNEL	最大脉冲漏极电流 (IDM)：	135 A
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TPCA8121 数据手册

TPCA8121

MOSFETs Silicon P-Channel MOS (U-MOS)

TPCA8121

1. Applications

•

Lithium-Ion Secondary Batteries

•

Power Management Switches

2. Features

(1) Small, thin package

(2) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = -10 V)

(3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)

(4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source 4: Gate

5, 6, 7, 8: Drain

SOP Advance

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VDGR

VGSS

-30

(RGS = 20 kΩ)

-20/+10

-45

(Note 1)

IDP

-135

(Tc = 25)

(t = 10 s)

(Note 2)

(Note 3)

(Note 4)

2.8

1.6

Single-pulse avalanche energy

Avalanche current

EAS

IAR

263

-45

Channel temperature

Storage temperature

(Note 5)

Tch

175



Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2011-09-27

Rev.1.0

12 3 4 5 6 7...9

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