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TPCA8A08-H(TE12L) PDF预览

TPCA8A08-H(TE12L)

更新时间： 2024-11-26 07:22:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 226K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,38A I(D),SO

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TPCA8A08-H(TE12L) 数据手册

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TPCA8A08-H  
TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode  
Silicon N-Channel MOS Type (U-MOS V-H)  
TPCA8A08-H  
High Efficiency DC-DC Converter Applications  
Notebook PC Applications  
Unit: mm  
1.27 0.4 ± 0.1  
Portable Equipment Applications  
8
0.05 M A  
5
•
Built-in a schottky barrier diode  
Low forward voltage: V  
High-speed switching  
Small gate charge: Q  
= −0.6 V (max)  
DSF  
0.15 ± 0.05  
•
•
•
= 11 nC (typ.)  
4
SW  
0.595  
A
1
Low drain-source ON-resistance:  
= 3.8 mΩ (typ.) (V  
R
= 4.5 V)  
GS  
DS (ON)  
5.0 ± 0.2  
•
•
•
High forward transfer admittance: |Y | = 105 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 30 V)  
DSS  
DS  
0.05 S  
Enhancement mode: V = 1.3 to 2.3 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
S
4
1
Absolute Maximum Ratings (Ta = 25°C)  
4.25 ± 0.2  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
30  
V
V
V
DSS  
8
5
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
1,2,3: SOURCE  
4: GATE  
5,6,7,8: DRAIN  
V
±20  
38  
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
JEDEC  
JEITA  
⎯
Pulsed (Note 1)  
I
114  
45  
DP  
⎯
Drain power dissipation (Tc = 25℃)  
P
W
W
D
D
TOSHIBA  
2-5Q1A  
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
2.8  
1.6  
Weight: 0.069 g (typ.)  
Drain power dissipation  
P
W
D
Circuit Configuration  
Single-pulse avalanche energy  
(Note 3)  
E
188  
38  
mJ  
A
AS  
8
7
6
5
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
2.57  
mJ  
AR  
(Tc = 25℃) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
−55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
1
2
3
4
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please  
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2010-01-19  
12345678

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