Datasheet > TPCA8A10-H(TE12L)

TPCA8A10-H(TE12L)

更新时间： 2024-11-25 20:01:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	250K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,40A I(D),SO

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TPCA8A10-H(TE12L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	40 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	58 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

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TPCA8A10-H

MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)

TPCA8A10-H

1. Applications

•

High-Efficiency DC-DC Converters

Notebook PCs

Mobile Equipment

2. Features

(1) Built-in a schottky barrier diode

Low forward voltage: VDSF = -0.6 V (max)

(2) High-speed switching

(3) Small gate charge: QSW = 12 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 4.5 V)

(5) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)

(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

±20

(Note 1)

IDP

120

(Tc = 25)

(t = 10 s)

(Note 2)

(Note 3)

(Note 4)

2.8

1.6

Single-pulse avalanche energy

Avalanche current

EAS

IAR

208

Channel temperature

Storage temperature

Tch

Tstg

150

-55 to 150



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2011-06

2014-02-17

Rev.2.0

12 3 4 5 6 7...9

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与TPCA8A10-H(TE12L)相关器件

型号	品牌	获取价格	描述	数据表
TPCA8A10-H(TE12L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,40A I(D),SO
TPCA8A10-H(TE12L1)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,40A I(D),SO
TPCA8A11-H	TOSHIBA	获取价格	TRANSISTOR 35 A, 30 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1S, 8 PIN, FET Genera
TPCC8001-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPCC8002-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPCC8003-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPCC8005-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPCC8006-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPCC8007	TOSHIBA	获取价格	TRANSISTOR 27000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-3X1S, TSON-8, FET
TPCC8007(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,27A I(D),LLCC

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