Datasheet > TPCA8A10-H

TPCA8A10-H

更新时间： 2024-11-25 12:33:23

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
9页	258K
描述
MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)

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TPCA8A10-H 技术参数

TPCA8A10-H

MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)

TPCA8A10-H

1. Applications

•

High-Efficiency DC-DC Converters

Notebook PCs

Mobile Handsets

2. Features

(1) Built-in a schottky barrier diode

Low forward voltage: VDSF = -0.6 V (max)

(2) High-speed switching

(3) Small gate charge: QSW = 12 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 2.9 mΩ (typ.) (VGS = 4.5 V)

(5) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)

(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance

2011-06-19

Rev.1.0

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
TPCA8A10-H(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,40A I(D),SO
TPCA8A10-H(TE12L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,40A I(D),SO
TPCA8A10-H(TE12L1)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,40A I(D),SO
TPCA8A11-H	TOSHIBA	获取价格	TRANSISTOR 35 A, 30 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1S, 8 PIN, FET Genera
TPCC8001-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPCC8002-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPCC8003-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPCC8005-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPCC8006-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPCC8007	TOSHIBA	获取价格	TRANSISTOR 27000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-3X1S, TSON-8, FET