Datasheet > TPCA8131,LQ(S

TPCA8131,LQ(S

更新时间： 2024-11-25 21:22:11

品牌	Logo	应用领域
东芝 - TOSHIBA		PC
页数	文件大小	规格书
9页	269K
描述
TPCA8131,LQ(S

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TPCA8131,LQ(S 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

TPCA8131,LQ(S 数据手册

TPCA8131

MOSFETs Silicon P-Channel MOS (U-MOS)

TPCA8131

1. Applications

•

Lithium-Ion Secondary Batteries

•

Power Management Switches

2. Features

(1) Small, thin package

(2) Low drain-source on-resistance: RDS(ON) = 12.4 mΩ (typ.) (VGS = -10 V)

(3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)

(4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

-30

-25/+20

-13

(Note 1)

IDP

-39

(Tc = 25)

(t = 10 s)

(Note 2)

(Note 3)

(Note 4)

2.8

1.6

Single-pulse avalanche energy

Avalanche current

EAS

IAR

-13

Channel temperature

Storage temperature

Tch

Tstg

150



-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2011-05

2014-02-13

Rev.2.0

12 3 4 5 6 7...9

中文翻译

下载PDF

与TPCA8131,LQ(S相关器件

型号	品牌	获取价格	描述	数据表
TPCA8A01-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPCA8A02-H	TOSHIBA	获取价格	High Efficiency DC-DC Converter Applications Notebook PC Applications
TPCA8A02-H(TE12L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,34A I(D),SO
TPCA8A04-H	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
TPCA8A05-H	TOSHIBA	获取价格	TRANSISTOR 20 A, 30 V, 0.0172 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1A, 8 PIN, FET Genera
TPCA8A05-H(TE12L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,20A I(D),SO
TPCA8A05-H(TE12L1)	TOSHIBA	获取价格	TPCA8A05-H(TE12L1)
TPCA8A05-H(TE12L1,Q)	TOSHIBA	获取价格	TPCA8A05-H(TE12L1,Q)
TPCA8A08-H	TOSHIBA	获取价格	TRANSISTOR 38 A, 30 V, 0.0053 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1A, 8 PIN, FET Genera
TPCA8A08-H(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,38A I(D),SO