Datasheet > TPCA8106(TE12L,Q,M)

TPCA8106(TE12L,Q,M)

更新时间： 2024-11-26 10:09:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	228K
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Power Field-Effect Transistor

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TPCA8106

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)

TPCA8106

Lithium Ion Battery Applications

Unit: mm

Notebook PC Applications

0.4 ± 0.1

1.27

0.05 M A

Portable Equipment Applications

0.15 ± 0.05

•

Small footprint due to small and thin package

Low drain-source ON-resistance: R = 2.9 mΩ (typ.)

DS (ON)

0.595

(V = −10V）

•

High forward transfer admittance: |Y | = 79S (typ.)

Low leakage current: I

= −10 μA (max) (V

= −30 V)

DSS

5.0 ± 0.2

Enhancement mode: V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

0.05 S

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

4.25 ± 0.2

−30

±20

−40

−120

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

1,2,3: SOURCE 4: GATE

5,6,7,8: DRAIN

Drain current

Pulsed (Note 1)

Drain power dissipation

(Tc=25℃)

(t = 10 s)

(Note 2a)

(t = 10 s)

(Note 2b)

JEDEC

JEITA

⎯

2.8

1.6

TOSHIBA

2-5Q1A

Drain power dissipation

Weight: 0.069 g (typ.)

Single pulse avalanche energy

(Note 3)

208

−40

4.5

Circuit Configuration

Avalanche current

Repetitive avalanche energy

(Tc = 25℃) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For Note 1 to 4, please refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

2010-01-14

12 3 4 5 6 7

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