Datasheet > TPCA8105(TE12L,Q)

TPCA8105(TE12L,Q)

更新时间： 2024-02-09 03:46:09

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	246K
描述
TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,6A I(D),SO

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TPCA8105(TE12L,Q) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.83
配置：	Single	最大漏极电流 (Abs) (ID)：	6 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	20 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

TPCA8105(TE12L,Q) 数据手册

浏览型号TPCA8105(TE12L,Q)的Datasheet PDF文件第2页

浏览型号TPCA8105(TE12L,Q)的Datasheet PDF文件第3页

浏览型号TPCA8105(TE12L,Q)的Datasheet PDF文件第4页

浏览型号TPCA8105(TE12L,Q)的Datasheet PDF文件第5页

TPCA8105

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)

TPCA8105

Notebook PC Applications

Unit: mm

Portable Equipment Applications

0.4±0.1

1.27

0.5±0.1

0.05

M A

•

Small footprint due to compact and slim package

Low drain-source ON-resistance : R = 23 mΩ (typ.)

DS (ON)

0.15±0.05

(V = − 4.5V）

•

High forward transfer admittance :|Y | = 14 S (typ.)

0.595

Low leakage current : I

Enhancement mode

= −10 μA (V

= −12 V)

DSS

5.0±0.2

0.95±0.05

0.166±0.05

: V = −0.5 to −1.2 V (V

= −10 V, I = −200 μA )

0.05

1.1±0.2

4.25±0.2

0.8±0.1

Absolute Maximum Ratings (Ta = 25°C)

1, 2, 3: Source

5, 6, 7, 8: Drain

4: Gate

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−12

±8

DSS

JEDEC

JEITA

⎯

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

TOSHIBA

2-5Q1A

Drain current

Pulse

(Note 1)

−6

−24

Weight: 0.076 g (typ.)

Drain power dissipation (Tc = 25°C)

Drain power dissipation (t = 10 s)

Circuit Configuration

2.8

1.6

(Note 2a)

Drain power dissipation (t = 10 s)

(Note 2b)

Single pulse avalanche energy

25.1

−6

(Note 3)

Avalanche current

Repetitive avalanche energy

0.8

(Tc = 25°C) (Note 4)

Channel temperature

Storage temperature range

150

°C

−55 to 150

stg

Note: For (Note 1), (Note 2), (Note 3), (Note 4), refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with caution.

2010-03-02

12 3 4 5 6 7

下载PDF

与TPCA8105(TE12L,Q)相关器件

型号	品牌	描述	获取价格	数据表
TPCA8105(TE12L1)	TOSHIBA	暂无描述	获取价格
TPCA8106	TOSHIBA	Field Effect Transistor Silicon P Channel MOS	获取价格
TPCA8106(TE12L	TOSHIBA	Power Field-Effect Transistor	获取价格
TPCA8106(TE12L,Q,M)	TOSHIBA	Power Field-Effect Transistor	获取价格
TPCA8107-H	TOSHIBA	Bipolar Small-Signal Transistors	获取价格
TPCA8107-H(TE12L1,Q)	TOSHIBA	TPCA8107-H(TE12L1,Q)	获取价格