TP2635

更新时间： 2024-09-19 22:42:03

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	459K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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TP2635 数据手册

TP2635

TP2640

Low Threshold

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

V_GS(th)

(max)

I_D(ON)

(min)

BV_DGS

-350V

-400V

SO-8

–

TO-92

Die^†

—

15Ω

-2.0V

-0.7A

TP2635N3

TP2640N3

TP2640LG

TP2640ND

^†MIL visual screening available.

Features

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

❏

Low threshold — -2.0V max.

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Complementary N- and P-channel devices

Applications

Package Options

❏

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

SGD

TO-92

Absolute Maximum Ratings

Drain-to-Source Voltage

BV_DSS

Drain-to-Gate Voltage

BV_DGS

Gate-to-Source Voltage

± 20V

SO-8

top view

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与TP2635相关器件

型号	品牌	获取价格	描述	数据表
TP2635_07	SUPERTEX	获取价格	P- Channel Enhancement-Mode Vertical DMOS FETs
TP2635_13	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FET
TP2635LG	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 350V V(BR)DSS \| SO
TP2635N3	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2635N3-G	SUPERTEX	获取价格	P- Channel Enhancement-Mode Vertical DMOS FETs
TP2635N3-GP002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor,
TP2635N3-GP003	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FET
TP2635N3-GP005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor,
TP2635N3-GP013	SUPERTEX	获取价格	SMALL SIGNAL, FET
TP2635N3-GP014	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FET

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