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TP2635N3-G PDF预览

TP2635N3-G

更新时间: 2024-11-08 03:04:19
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关
页数 文件大小 规格书
5页 563K
描述
P- Channel Enhancement-Mode Vertical DMOS FETs

TP2635N3-G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:7.89Is Samacsys:N
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:350 V最大漏极电流 (Abs) (ID):0.18 A
最大漏极电流 (ID):0.18 A最大漏源导通电阻:15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):12 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL功耗环境最大值:1 W
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TP2635N3-G 数据手册

 浏览型号TP2635N3-G的Datasheet PDF文件第2页浏览型号TP2635N3-G的Datasheet PDF文件第3页浏览型号TP2635N3-G的Datasheet PDF文件第4页浏览型号TP2635N3-G的Datasheet PDF文件第5页 
TP2635/TP2640  
P- Channel Enhancement-Mode  
Vertical DMOS FETs  
Features  
General Description  
Low threshold — -2.0V max.  
High input impedance  
Low input capacitance  
Fast switching speeds  
Low on resistance  
Free from secondary breakdown  
Low input and output leakage  
Complementary N- and P-channel devices  
These low threshold enhancement-mode (normally-off)  
transistors utilize a vertical DMOS structure and Supertex’s  
well-proven silicon-gate manufacturing process. This  
combination produces devices with the power handling  
capabilities of bipolar transistors and with the high input  
impedance and positive temperature coefficient inherent  
in MOS devices. Characteristic of all MOS structures,  
these devices are free from thermal runaway and thermally  
induced secondary breakdown.  
Applications  
Logic level interfaces – ideal for TTL and CMOS  
Solid state relays  
Battery operated systems  
Photo voltaic drives  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
Analog switches  
General purpose line drivers  
Telecom switches  
Absolute Maximum Ratings  
Parameter  
Pin Configurations  
Value  
BVDSS  
BVDGS  
20V  
D
D
1
2
3
4
8
7
6
5
NC  
NC  
S
Drain to source voltage  
Drain to gate voltage  
D
D
Gate to source voltage  
G
S G D  
Operating and storage temperature  
Soldering temperature1  
-55°C to +150°C  
TO-92  
SO-8  
(top view)  
+300°C  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
Note 1. Distance of 1.6mm from case for 10 seconds.  
Ordering Information  
Package Options  
Device  
TP2635  
TP2640  
BVDSS/BVDGS  
RDS(ON) (max)  
15Ω  
VGS(th) (max)  
-2.0V  
ID(ON) (min)  
-0.7A  
SO-8  
TO-92  
-
TP2635N3  
TP2635N3-G  
TP2640N3  
TP2640N3-G  
-350V  
-400V  
-
TP2640LG  
TP2640LG-G  
15Ω  
-2.0V  
-0.7A  
-G indicates package is RoHS compliant (‘Green’)  
1

TP2635N3-G 替代型号

型号 品牌 替代类型 描述 数据表
TP2635N3 SUPERTEX

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