Datasheet > TP2635_07

TP2635_07

更新时间： 2024-11-08 03:26:51

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
5页	563K
描述
P- Channel Enhancement-Mode Vertical DMOS FETs

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中文翻译

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数据手册

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TP2635_07 数据手册

TP2635/TP2640

P- Channel Enhancement-Mode

Vertical DMOS FETs

Features

General Description

► Low threshold — -2.0V max.

► High input impedance

► Low input capacitance

► Fast switching speeds

► Low on resistance

► Free from secondary breakdown

► Low input and output leakage

► Complementary N- and P-channel devices

These low threshold enhancement-mode (normally-off)

transistors utilize a vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This

combination produces devices with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures,

these devices are free from thermal runaway and thermally

induced secondary breakdown.

Applications

► Logic level interfaces – ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo voltaic drives

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

► Analog switches

► General purpose line drivers

► Telecom switches

Absolute Maximum Ratings

Parameter

Pin Conﬁgurations

Value

BV_DSS

BV_DGS

20V

Drain to source voltage

Drain to gate voltage

Gate to source voltage

S G D

Operating and storage temperature

Soldering temperature¹

-55°C to +150°C

TO-92

SO-8

(top view)

+300°C

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Note 1. Distance of 1.6mm from case for 10 seconds.

Ordering Information

Package Options

Device

TP2635

TP2640

BV_DSS/BV_DGS

R_DS(ON)(max)

15Ω

V_GS(th)(max)

-2.0V

I_D(ON)(min)

-0.7A

SO-8

TO-92

TP2635N3

TP2635N3-G

TP2640N3

TP2640N3-G

-350V

-400V

TP2640LG

TP2640LG-G

15Ω

-2.0V

-0.7A

-G indicates package is RoHS compliant (‘Green’)

12 3 4 5

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与TP2635_07相关器件

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TP2635_13	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FET
TP2635LG	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 350V V(BR)DSS \| SO
TP2635N3	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2635N3-G	SUPERTEX	获取价格	P- Channel Enhancement-Mode Vertical DMOS FETs
TP2635N3-GP002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor,
TP2635N3-GP003	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FET
TP2635N3-GP005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor,
TP2635N3-GP013	SUPERTEX	获取价格	SMALL SIGNAL, FET
TP2635N3-GP014	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FET
TP2640	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs