Datasheet > TN2520N8-G

TN2520N8-G

更新时间： 2024-09-19 02:52:23

品牌	Logo	应用领域
超科 - SUPERTEX		晶体晶体管开关脉冲
页数	文件大小	规格书
5页	572K
描述
P-Channel Enhancement Mode Vertical DMOS FETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TN2520N8-G 数据手册

TP2520

P-Channel Enhancement Mode

Vertical DMOS FETs

Features

General Description

This low threshold enhancement-mode (normally-off)

transistorutilizesaverticalDMOSstructureandSupertex’s

well-proven silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally-

induced secondary breakdown.

► Low threshold — -2.4V max.

► High input impedance

► Low input capacitance — 125pF max.

► Fast switching speeds

► Low ON-resistance

► Free from secondary breakdown

► Low input and output leakage

► Complementary N and P-channel devices

Applications

► Logic level interfaces – ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo voltaic drives

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching

speeds are desired.

► Analog switches

► General purpose line drivers

► Telecom switches

Ordering Information

R_DS(ON)

V_GS(th)

max

(V)

I_D(ON)

min

(A)

Package Option

TO-243AA (SOT-89)

TN252ꢀN8-G

BV_DSS/BV_DGS

max

(Ω)

(V)

-2ꢀꢀ

-2.4

-ꢀ.75

-G indicates package is RoHS compliant (‘Green’)

Pin Conﬁguration

DRAIN

Absolute Maximum Ratings

Parameter

SOURCE

Value

BV_DSS

DRAIN

GATE

Drain-to-source voltage

Drain-to-gate voltage

TO-243AA (SOT-89) (N8)

BV_DGS

Gate-to-source voltage

2ꢀV

Product Marking

Operating and storage temperature

-55°C to +15ꢀ°C

Soldering temperature*

3ꢀꢀ°C

TP5CW

W = Code for week sealed

TO-243AA (SOT-89) (N8)

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level

may affect device reliability. All voltages are referenced to device ground.

* Distance of 1.6 mm from case for 10 seconds.

12 3 4 5

中文翻译

下载PDF

与TN2520N8-G相关器件

型号	品牌	获取价格	描述	数据表
TN2524	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2524	MICROCHIP	获取价格	This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS st
TN2524_07	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN2524N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2524N8-G	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN2524ND	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2529	SUPERTEX	获取价格	Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET
TN2529K6-G	SUPERTEX	获取价格	Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET
TN2535	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2535N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs