TN2524
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
► Low threshold — ±.2V max
► High input impedance
► Low input capacitance — 1±5pF max
► Fast switching speeds
► Low ON-resistance
► Free from secondary breakdown
► Low input and output leakage
► Complementary N and P-channel devices
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Applications
► Logic level interfaces — ideal for TTL and CMOS
► Solid state relays
► Battery operated systems
► Photo voltaic devices
► Analog switches
► General purpose line drivers
► Telecom switches
Ordering Information
RDS(ON)
VGS(th)
max
(V)
ID(ON)
min
(A)
Package Options
BVDSS/BVDGS
max
(V)
TO-243AA (SOT-89)
Die*
(Ω)
±42
6.2
±.2
1.2
TN±5±4N8-G
TN±5±4ND
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available.
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
SOURCE
DRAIN
Value
GATE
Drain-to-source voltage
Drain-to-gate voltage
BVDSS
BVDGS
TO-243AA (SOT-89) (N8)
Gate-to-source voltage
±±2V
-55OC to +152OC
Product Marking
Operating and storage temperature
Soldering temperature*
322OC
TN5CW
W = Code for week sealed
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
TO-243AA (SOT-89) (N8)
* Distance of 1.6mm from case for 10 seconds.