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TN2524ND

更新时间： 2024-09-18 22:42:07
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关输入元件
页数 文件大小 规格书
4页 478K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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中文翻译

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TN2524ND 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Transferred零件包装代码：DIE
包装说明：UNCASED CHIP, X-XUUC-NReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.78
其他特性：LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：240 V最大漏源导通电阻：6 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：25 pF
JESD-30 代码：X-XUUC-NJESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：UNSPECIFIED
封装形式：UNCASED CHIP峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：TIN LEAD端子形式：NO LEAD
端子位置：UPPER处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

TN2524ND 数据手册

 浏览型号TN2524ND的Datasheet PDF文件第2页浏览型号TN2524ND的Datasheet PDF文件第3页浏览型号TN2524ND的Datasheet PDF文件第4页 
TN2524  
Low Threshold  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
BVDSS  
/
RDS(ON)  
VGS(th)  
ID(ON)  
(min)  
BVDGS  
(max)  
(max)  
TO-243AA*  
Die†  
240V  
6.0Ω  
2.0V  
1.0A  
TN2524N8  
TN2524ND  
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.  
† MIL visual screening available.  
Product marking for TO-243AA  
TN5C❋  
Where❋=2-weekalphadatecode  
Features  
❏
❏
❏
❏
❏
❏
❏
❏
Low threshold — 2.0V max.  
High input impedance  
Low Threshold DMOS Technology  
Low input capacitance — 125pF max.  
Fast switching speeds  
These low threshold enhancement-mode (normally-off) transis-  
torsutilizeaverticalDMOSstructureandSupertex'swell-proven  
silicon-gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar transis-  
tors and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all MOS  
structures, these devices are free from thermal runaway and  
thermally induced secondary breakdown.  
Low on resistance  
Free from secondary breakdown  
Low input and output leakage  
Complementary N- and P-channel devices  
Supertex vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where very low threshold  
voltage, highbreakdownvoltage, highinputimpedance, lowinput  
capacitance, and fast switching speeds are desired.  
Applications  
❏
❏
❏
❏
❏
❏
❏
Logic level interfaces – ideal for TTL and CMOS  
Solid state relays  
Package Option  
Battery operated systems  
Photo voltaic drives  
Analog switches  
General purpose line drivers  
Telecom switches  
D
G
D
S
Absolute Maximum Ratings  
TO-243AA  
(SOT-89)  
Drain-to-Source Voltage  
BVDSS  
BVDGS  
± 20V  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
Operating and Storage Temperature  
Soldering Temperature*  
-55°C to +150°C  
300°C  
Note: See Package Outline section for dimensions.  
* Distance of 1.6 mm from case for 10 seconds.  
11/12/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
1234

中文翻译

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