Datasheet > 触发装置 > 可控硅整流器> TN2540-600GTR

TN2540-600GTR

更新时间： 2024-09-18 22:42:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅
页数	文件大小	规格书
7页	96K
描述
25A SCRs

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中文翻译

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数据手册

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TN2540-600GTR 数据手册

TN25 and TYNx25 Series

STANDARD

25A SCRs

MAIN FEATURES:

Symbol

Value

Unit

T(RMS)

600 to 1000

DRM RRM

DESCRIPTION

D PAK

(TN25-G)

TO-220AB

(TYN)

The TYN / TN25 SCR Series is suitable for

general purpose applications.

Using clip assembly technology, they provide a

superior performance in surge current capabilities.

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

RMS on-state current (180° conduction angle)

T(RMS)

Tc = 100°C

Average on-state current (180° conduction angle)

(AV)

Non repetitive surge peak on-state

current

tp = 8.3 ms

tp = 10 ms

314

300

TSM

Tj = 25°C

tp = 10 ms

F = 60 Hz

tp = 20 µs

Tj = 25°C

450

A S

I t

I t Value for fusing

Critical rate of rise of on-state current

dI/dt

Tj = 125°C

A/µs

= 2 x I , tr ≤ 100 ns

Peak gate current

Tj = 125°C

Average gate power dissipation

G(AV)

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

stg

°C

Maximum peak reverse gate voltage

RGM

April 2002 - Ed: 4A

1/7

12 3 4 5 6 7

中文翻译

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