Datasheet > TN2540-G

TN2540-G

更新时间： 2024-09-19 22:42:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
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5页	107K
描述
SCR

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中文翻译

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数据手册

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TN2540-G 数据手册

TN2540-G

SCR

FEATURES

HIGH SURGE CAPABILITY

HIGH ON-STATE CURRENT

HIGH STABILITY AND RELIABILITY

DESCRIPTION

The TN2540 series of Silicon Controlled Rectifiers

uses a high performance glass passivated tech-

nology.

D²PAK

This SCR is designed for power supplies up to

400Hz on resistive or inductive load.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

RMS on-state current

(180 conduction angle)

I_T(RMS)

Tc= 100 C

Average on-state current

I_T(AV)

I_TSM

Tc= 100 C

(180 conduction angle)

Non repetitive surge peak on-state current

tp = 8.3 ms

314

(Tj initial = 25°C)

tp = 10 ms

tp = 10ms

300

450

100

I²t Value for fusing

I²t

A²s

A/ s

dI/dt

Critical rate of rise of on-state current

I_G= 100 mA

dI_G/dt = 1 A/ s.

T_stg

T_j

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Maximum temperature for soldering during 10s

260

TN2540-

Symbol

Parameter

Unit

600G

600

800G

V_DRM

V_RRM

Repetitive peak off-state voltage

Tj = 125°C

800

May 1998 - Ed: 5

1/5

12 3 4 5

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TN2540N3-GP003	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN2540N3-GP005	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN2540N3-GP005	MICROCHIP	获取价格	SMALL SIGNAL, FET
TN2540N3-GP013	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN2540N3-GP014	MICROCHIP	获取价格	SMALL SIGNAL, FET
TN2540N3-GP014	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
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