Datasheet > TN2540N3-GP014

TN2540N3-GP014

更新时间： 2024-11-26 14:45:15

品牌	Logo	应用领域
美国微芯 - MICROCHIP		开关晶体管
页数	文件大小	规格书
6页	709K
描述
SMALL SIGNAL, FET

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中文翻译

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技术参数
数据手册

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TN2540N3-GP014 技术参数

生命周期：	Active	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	compliant	风险等级：	5.62
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	400 V
最大漏极电流 (ID)：	0.175 A	最大漏源导通电阻：	12 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	25 pF
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	N-CHANNEL	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TN2540N3-GP014 数据手册

Supertex inc.

TN2540

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Low threshold (2.0V max.)

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input impedance

and positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

► High input impedance

► Low input capacitance (125pF max.)

► Fast switching speeds

► Low on-resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

► Logic level interfaces - ideal for TTL and CMOS

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog and Telecom switches

► General purpose line drivers

Ordering Information

Product Summary

R_DS(ON)

I_D(ON)

V_GS(th)

Part Number

Package Options

Packing

BV_DSS/BV_DGS

(max)

(min)

(max)

TN2540N3-G

TO-92

1000/Bag

2000/Reel

400V

12Ω

1.0A

2.0V

TN2540N3-G P002 TO-92

TN2540N3-G P003 TO-92

TN2540N3-G P005 TO-92

TN2540N3-G P013 TO-92

TN2540N3-G P014 TO-92

Pin Conﬁguration

DRAIN

TN2540N8-G

TO-243AA (SOT-89) 2000/Reel

DRAIN

-G denotes a lead (Pb)-free / RoHS compliant package

Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92

Taping Speciﬁcations and Winding Styles

SOURCE

DRAIN

GATE

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

GATE

Absolute Maximum Ratings

TO-92

TO-243AA (SOT-89)

Parameter

Value

Product Marking

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

BV_DSS

BV_DGS

SiTN

2 5 4 0

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

±20V

-55^OC to +150^OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Package may or may not include the following marks: Si or

TO-92

W = Code for week sealed

TN5DW

Typical Thermal Resistance

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-243AA (SOT-89)

Package

θ_ja

TO-92

132^OC/W

133^OC/W*

TO-243AA (SOT-89)

* Mounted on FR5 Board, 25mm x 25mm x 1.57mm

Doc.# DSFP-TN2540

A062113

Supertex inc.

www.supertex.com

12 3 4 5 6

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与TN2540N3-GP014相关器件

型号	品牌	获取价格	描述	数据表
TN2540N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 400V, 1-Element, N-Channel, Silicon, Met
TN2540N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.175A I(D), 400V, 1-Element, N-Channel, Silicon, Me
TN2540N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 400V, 1-Element, N-Channel, Silicon, Met
TN2540N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 400V, 1-Element, N-Channel, Silicon, Met
TN2540N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 400V, 1-Element, N-Channel, Silicon, Met
TN2540N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 400V, 1-Element, N-Channel, Silicon, Met
TN2540N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 400V, 1-Element, N-Channel, Silicon, Met
TN2540N3P012	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 400V, 1-Element, N-Channel, Silicon, Met
TN2540N3P014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 400V, 1-Element, N-Channel, Silicon, Met
TN2540N3P016	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 400V, 1-Element, N-Channel, Silicon, Met

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