Datasheet > TN2540N3-GP002

TN2540N3-GP002

更新时间： 2024-11-05 01:09:47

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
6页	741K
描述
N-Channel Enhancement-Mode Vertical DMOS FET

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TN2540N3-GP002 数据手册

Supertex inc.

TN2540

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Low threshold (2.0V max.)

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input impedance

and positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

► High input impedance

► Low input capacitance (125pF max.)

► Fast switching speeds

► Low on-resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

► Logic level interfaces - ideal for TTL and CMOS

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog and Telecom switches

► General purpose line drivers

Ordering Information

Product Summary

R_DS(ON)

I_D(ON)

V_GS(th)

Part Number

Package Options

Packing

BV_DSS/BV_DGS

(max)

(min)

(max)

TN2540N3-G

TO-92

1000/Bag

2000/Reel

400V

12Ω

1.0A

2.0V

TN2540N3-G P002 TO-92

TN2540N3-G P003 TO-92

TN2540N3-G P005 TO-92

TN2540N3-G P013 TO-92

TN2540N3-G P014 TO-92

Pin Conﬁguration

DRAIN

TN2540N8-G

TO-243AA (SOT-89) 2000/Reel

DRAIN

-G denotes a lead (Pb)-free / RoHS compliant package

Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92

Taping Speciﬁcations and Winding Styles

SOURCE

DRAIN

GATE

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

GATE

Absolute Maximum Ratings

TO-92

TO-243AA (SOT-89)

Parameter

Value

Product Marking

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

BV_DSS

BV_DGS

SiTN

2 5 4 0

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

±20V

-55^OC to +150^OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Package may or may not include the following marks: Si or

TO-92

W = Code for week sealed

TN5DW

Typical Thermal Resistance

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-243AA (SOT-89)

Package

θ_ja

TO-92

132^OC/W

133^OC/W*

TO-243AA (SOT-89)

* Mounted on FR5 Board, 25mm x 25mm x 1.57mm

Doc.# DSFP-TN2540

A062113

Supertex inc.

www.supertex.com

12 3 4 5 6

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与TN2540N3-GP002相关器件

型号	品牌	获取价格	描述	数据表
TN2540N3-GP003	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN2540N3-GP005	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN2540N3-GP005	MICROCHIP	获取价格	SMALL SIGNAL, FET
TN2540N3-GP013	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN2540N3-GP014	MICROCHIP	获取价格	SMALL SIGNAL, FET
TN2540N3-GP014	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN2540N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 400V, 1-Element, N-Channel, Silicon, Met
TN2540N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.175A I(D), 400V, 1-Element, N-Channel, Silicon, Me
TN2540N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 400V, 1-Element, N-Channel, Silicon, Met
TN2540N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 400V, 1-Element, N-Channel, Silicon, Met

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