5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 小信号场效应晶体管> TN2540N3
TN2540N3 PDF预览

TN2540N3

更新时间： 2024-11-07 22:36:35
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关
页数 文件大小 规格书
4页 481K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

阅读下载

中文翻译

获取价格

TN2540N3 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-92包装说明：CYLINDRICAL, O-PBCY-W3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.24Is Samacsys：N
其他特性：LOGIC LEVEL COMPATIBLE配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：400 V最大漏极电流 (ID)：0.175 A
最大漏源导通电阻：12 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：25 pFJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-W3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：WIRE端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

TN2540N3 数据手册

 浏览型号TN2540N3的Datasheet PDF文件第2页浏览型号TN2540N3的Datasheet PDF文件第3页浏览型号TN2540N3的Datasheet PDF文件第4页 
TN2540  
Low Threshold  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
BVDSS  
/
RDS(ON)  
(max)  
VGS(th)  
(max)  
ID(ON)  
(min)  
BVDGS  
TO-92  
TO-243AA*  
Die†  
400V  
12Ω  
2.0V  
1.0A  
TN2540N3  
TN2540N8  
TN2540ND  
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.  
†
MIL visual screening available.  
Product marking for TO-243AA  
TN5D❋  
Where❋=2-weekalphadatecode  
Features  
❏
❏
❏
❏
❏
❏
❏
❏
Low threshold — 2.0V max.  
High input impedance  
Low input capacitance — 125pF max.  
Fast switching speeds  
Low Threshold DMOS Technology  
These low threshold enhancement-mode (normally-off) transis-  
tors utilize a vertical DMOS structure and Supertex's well-proven  
silicon-gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar transistors  
and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all MOS  
structures, these devices are free from thermal runaway and  
thermally induced secondary breakdown.  
Low on resistance  
Free from secondary breakdown  
Low input and output leakage  
Complementary N- and P-channel devices  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where very low threshold  
voltage, highbreakdownvoltage, highinputimpedance, lowinput  
capacitance, and fast switching speeds are desired.  
Applications  
❏
❏
❏
❏
❏
❏
❏
Logic level interfaces – ideal for TTL and CMOS  
Solid state relays  
Battery operated systems  
Photo voltaic drives  
Package Options  
Analog switches  
General purpose line drivers  
Telecom switches  
D
G
D
S
Absolute Maximum Ratings  
Drain-to-Source Voltage  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
TO-243AA  
(SOT-89)  
BVDSS  
BVDGS  
± 20V  
SGD  
TO-92  
Operating and Storage Temperature  
Soldering Temperature*  
-55°C to +150°C  
300°C  
* Distance of 1.6 mm from case for 10 seconds.  
Note: See Package Outline section for dimensions.  
11/12/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
1234

中文翻译

下载PDF

与TN2540N3相关器件

型号 品牌 获取价格 描述 数据表
TN2540N3-G SUPERTEX

获取价格

 		Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET
TN2540N3-GP002 SUPERTEX

获取价格

 		N-Channel Enhancement-Mode Vertical DMOS FET
TN2540N3-GP003 SUPERTEX

获取价格

 		N-Channel Enhancement-Mode Vertical DMOS FET
TN2540N3-GP005 SUPERTEX

获取价格

 		N-Channel Enhancement-Mode Vertical DMOS FET
TN2540N3-GP005 MICROCHIP

获取价格

 		SMALL SIGNAL, FET
TN2540N3-GP013 SUPERTEX

获取价格

 		N-Channel Enhancement-Mode Vertical DMOS FET
TN2540N3-GP014 MICROCHIP

获取价格

 		SMALL SIGNAL, FET
TN2540N3-GP014 SUPERTEX

获取价格

 		N-Channel Enhancement-Mode Vertical DMOS FET
TN2540N3P001 SUPERTEX

获取价格

 		Small Signal Field-Effect Transistor, 0.22A I(D), 400V, 1-Element, N-Channel, Silicon, Met
TN2540N3P003 SUPERTEX

获取价格

 		Small Signal Field-Effect Transistor, 0.175A I(D), 400V, 1-Element, N-Channel, Silicon, Me

与TN2540N3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证