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TN2540-1000G-TR PDF预览

TN2540-1000G-TR

更新时间: 2024-09-18 22:06:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发装置可控硅整流器
页数 文件大小 规格书
7页 96K
描述
25A SCRs

TN2540-1000G-TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:PLASTIC, D2PAK-3针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.65Is Samacsys:N
外壳连接:ANODE配置:SINGLE
关态电压最小值的临界上升速率:1000 V/us最大直流栅极触发电流:40 mA
最大直流栅极触发电压:1.3 V最大维持电流:50 mA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
最大漏电流:4 mA通态非重复峰值电流:314 A
元件数量:1端子数量:2
最大通态电流:16000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大均方根通态电流:25 A断态重复峰值电压:1000 V
重复峰值反向电压:1000 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

TN2540-1000G-TR 数据手册

 浏览型号TN2540-1000G-TR的Datasheet PDF文件第2页浏览型号TN2540-1000G-TR的Datasheet PDF文件第3页浏览型号TN2540-1000G-TR的Datasheet PDF文件第4页浏览型号TN2540-1000G-TR的Datasheet PDF文件第5页浏览型号TN2540-1000G-TR的Datasheet PDF文件第6页浏览型号TN2540-1000G-TR的Datasheet PDF文件第7页 
TN25 and TYNx25 Series  
®
STANDARD  
25A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
25  
Unit  
A
G
I
T(RMS)  
K
V
/V  
600 to 1000  
40  
V
DRM RRM  
A
A
I
mA  
GT  
K
A
G
K
A
G
DESCRIPTION  
2
D PAK  
(TN25-G)  
TO-220AB  
(TYN)  
The TYN / TN25 SCR Series is suitable for  
general purpose applications.  
Using clip assembly technology, they provide a  
superior performance in surge current capabilities.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (180° conduction angle)  
T(RMS)  
Tc = 100°C  
Tc = 100°C  
25  
16  
A
A
T
Average on-state current (180° conduction angle)  
(AV)  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
tp = 10 ms  
314  
300  
TSM  
Tj = 25°C  
A
²
²
2
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
450  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage  
5
RGM  
April 2002 - Ed: 4A  
1/7  

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