Datasheet > TK4P55D

TK4P55D

更新时间： 2024-11-05 05:53:23

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	209K
描述
Switching Regulator Applications

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数据手册

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TK4P55D 数据手册

TK4P55D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TK4P55D

Switching Regulator Applications

Unit: mm

6.6 ± 0.2

5.34 ± 0.13

•

Low drain-source ON-resistance: R

High forward transfer admittance: ⎪Y ⎪ = 2.0 S (typ.)

= 1.5 Ω (typ.)

DS (ON)

0.58MAX

Low leakage current: I

= 10 μA (max) (V

= 550 V)

DSS

Enhancement-mode: V = 2.4 to 4.4 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1.14MAX

2.29

0.76 ± 0.12

Characteristics

Drain-source voltage

Symbol

Rating

Unit

550

±30

DSS

Gate-source voltage

GSS

(Note 1)

1. GATE

2. DRAIN

（HEAT SINK）

3. SOURCE

Drain current

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

⎯

Single pulse avalanche energy

139

(Note 2)

Avalanche current

TOSHIBA

2-7K1A

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight : 0.36 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Internal Connection

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.56

125

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 15 mH, R = 25 Ω, I = 4 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2010-02-25

12 3 4 5 6

中文翻译

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