Datasheet > TK4P60DB

TK4P60DB

更新时间： 2024-11-05 11:59:35

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	310K
描述
Silicon N Channel MOS Type (Ï-MOSâ¦)

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TK4P60DB 数据手册

TK4P60DB

Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications

Unit: mm

6.6 ± 0.2

5.34 ± 0.13

•

Low drain-source ON-resistance: R

High forward transfer admittance: ⎪Y ⎪ = 2.2 S (typ.)

= 1.6 Ω (typ.)

DS (ON)

0.58MAX

Low leakage current: I

= 10 μA (max) (V

= 600 V)

DSS

Enhancement-mode: V = 2.4 to 4.4 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1.14MAX

2.29

Characteristics

Drain-source voltage

Symbol

Rating

Unit

0.76 ± 0.12

600

±30

3.7

DSS

Gate-source voltage

GSS

(Note 1)

Drain current

Pulse (t = 1 ms)

1. GATE

2. DRAIN

（HEAT SINK）

3. SOURCE

14.8

(Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

147

(Note 2)

JEDEC

JEITA

⎯

Avalanche current

3.7

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-7K1A

150

Weight : 0.36 g (typ.)

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.56

125

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 18.7 mH, R = 25 Ω, I = 3.7 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

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