Datasheet > TK50P04M1

TK50P04M1

更新时间： 2024-01-22 04:12:01

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	278K
描述
MOSFETs Silicon N-Channel MOS (U-MOSî±-H)

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中文翻译

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技术参数
数据手册

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TK50P04M1 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	50 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	60 W
子类别：	FET General Purpose Power	表面贴装：	YES

TK50P04M1 数据手册

TK50P04M1

MOSFETs Silicon N-Channel MOS (U-MOS-H)

1. Applications

•

Switching Voltage Regulators

•

Motor Drivers

2. Features

(1) High-speed switching

(2) Low gate charge: Q_SW= 9.4 nC (typ.)

(3) Low drain-source on-resistance: R_DS(ON)= 6.7 mΩ (typ.) (V_GS= 10 V)

(4) Low leakage current: I_DSS= 10 µA (max) (V_DS= 40 V)

(5) Enhancement mode: V_th= 1.3 to 2.3 V (V_DS= 10 V, I_D= 0.5 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK

4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

V_DSS

V_GSS

I_D

±20

(Note 1)

I_DP

150

(T_c= 25)

P_D

Single-pulse avalanche energy

Avalanche current

(Note 2)

E_AS

I_AR

Channel temperature

Storage temperature

T_ch

T_stg

150



-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

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