Datasheet > TK4R4P06PL

TK4R4P06PL

更新时间： 2023-12-20 18:44:45

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TK4R4P06PL 数据手册

TK4R4P06PL

MOSFETs Silicon N-channel MOS (U-MOS�-H)

TK4R4P06PL

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 15.1 nC (typ.)

(3) Small output charge: Qoss = 39 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK

Start of commercial production

2017-04

2021-01-27

Rev.3.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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