Datasheet > TK4R3E06PL

TK4R3E06PL

更新时间： 2024-11-06 14:56:55

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TK4R3E06PL 数据手册

TK4R3E06PL

MOSFETs Silicon N-channel MOS (U-MOS�-H)

TK4R3E06PL

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 15.1 nC (typ.)

(3) Small output charge: Qoss = 39 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

TO-220

Start of commercial production

2016-10

2021-01-20

Rev.3.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
TK4R4P06PL	TOSHIBA	获取价格	N-ch MOSFET, 60 V, 0.0044 Ω@10V, DPAK, U-MOSⅨ
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TK50A	TOPSTEK	获取价格	Topstek Current Transducer
TK50A04K3	NXP	获取价格	MOSFETs Silicon N-channel MOS (U-MOSIV)
TK50F15J1	TOSHIBA	获取价格	Switching Voltage Regulators
TK50J30D	TOSHIBA	获取价格	Switching Voltage Regulators
TK50J60U	TOSHIBA	获取价格	Switching Voltage Regulators
TK50P03M1	FREESCALE	获取价格	MOSFETs Silicon N-Channel MOS (U-MOSî±-H)