Datasheet > TK4P60DA

TK4P60DA

更新时间： 2024-11-05 12:24:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	428K
描述
MOSFETs Silicon N-Channel MOS (Ï-MOSî²)

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数据手册

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TK4P60DA 数据手册

TK4P60DA

MOSFETs Silicon N-Channel MOS (π-MOS)

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: R_DS(ON)= 1.7 Ω (typ.) (V_GS= 10 V)

(2) High forward transfer admittance: |Y_fs| = 2.2 S (typ.)

(3) Low leakage current: I_DSS= 10 µA (max) (V_DS= 600 V)

(4) Enhancement mode: V_th= 2.4 to 4.4 V (V_DS= 10 V, I_D= 1 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK

4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

V_DSS

V_GSS

I_D

600

±30

3.5

(Note 1)

I_DP

(T_c= 25)

P_D

Single-pulse avalanche energy

Avalanche current

(Note 2)

(Note 3)

E_AS

I_AR

132

3.5

Repetitive avalanche energy

Channel temperature

E_AR

T_ch



150

-55 to 150

Storage temperature

T_stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

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