Datasheet > TK4P55DA

TK4P55DA

更新时间： 2024-11-05 05:53:23

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	203K
描述
Switching Regulator Applications

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中文翻译

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数据手册

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TK4P55DA 数据手册

TK4P55DA

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TK4P55DA

Switching Regulator Applications

Unit: mm

6.6 ± 0.2

5.34 ± 0.13

•

Low drain-source ON-resistance: R

High forward transfer admittance: |Y | = 1.8 S (typ.)

= 2.0 Ω(typ.)

DS (ON)

0.58MAX

Low leakage current: I

= 10 μA (max) (V

= 550 V)

DSS

Enhancement mode: V = 2.4 to 4.4 V (V

= 10 V, I = 1 mA)

1.14MAX

Absolute Maximum Ratings (Ta = 25°C)

2.29

0.76 ± 0.12

Characteristics

Drain-source voltage

Symbol

Rating

Unit

550

±30

3.5

DSS

Gate-source voltage

GSS

1. GATE

2. DRAIN

(Note 1)

（HEAT SINK）

3. SOURCE

Drain current

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

⎯

Single pulse avalanche energy

121

(Note 2)

TOSHIBA

2-7K1A

Avalanche current

3.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 0.36 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Internal Connection

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.56

125

°C/W

th (ch-c)

th (ch-a)

Note 1:Ensure that the channel temperature does not exceed 150℃.

Note 2: = 90 V, T = 25°C(initial), L = 17.1 mH, R = 25 Ω, I = 3.5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2009-08-07

12 3 4 5 6

中文翻译

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