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TISP8200MDR-S

更新时间： 2024-09-14 04:28:23
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
13页 325K
描述
COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION

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中文翻译

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TISP8200MDR-S 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SOP,针数：8
Reach Compliance Code：compliantHTS代码：8542.39.00.01
风险等级：5.23JESD-30 代码：R-PDSO-G8
JESD-609代码：e3长度：4.9 mm
湿度敏感等级：1功能数量：1
端子数量：8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified座面最大高度：1.75 mm
表面贴装：YES电信集成电路类型：SURGE PROTECTION CIRCUIT
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3.9 mm
Base Number Matches：1

TISP8200MDR-S 数据手册

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TISP8200M, BUFFERED P-GATE SCR DUAL  
TISP8201M, BUFFERED N-GATE SCR DUAL  
VERSIONS  
*RoHS COMPLIANT  
AVAILABLE  
COMPLEMENTARY BUFFERED-GATE SCRS  
FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION  
TISP8200M & TISP8201M  
High Performance Protection for SLICs with +ve & -ve Battery  
Supplies  
TISP8200M D Package (Top View)  
1
8
7
6
5
G1  
K1  
K2  
G2  
NC  
A
TISP8200M, Negative Overvoltage Protector  
– Wide 0 to -90 V Programming Range  
– Low 5 mA max. Gate Triggering Current  
– High -150 mA min. Holding Current  
2
3
4
A
NC  
MDRXAKC  
TISP8201M, Positive Overvoltage Protector  
– Wide 0 to +90 V Programming Range  
– Low -5 mA max. Gate Triggering Current  
– 20 mA min. Holding Current  
NC - No internal connection  
TISP8200M Device Symbol  
K1  
Rated for International Surge Wave Shapes  
I
tsp  
A
Wave Shape  
Standard  
G1  
G2  
A
A
2/10 µs  
10/700 µs  
10/1000 µs  
Telcordia GR-1089-CORE 210  
ITU-T K.20, K.21 & K.45 70  
Telcordia GR-1089-CORE 45  
Surface Mount Small-Outline Package  
SDRXAJB  
K2  
............................................ UL Recognized Components  
Description  
TISP8201M D Package (Top View)  
1
8
7
6
5
G1  
A1  
A2  
G2  
NC  
K
The TISP8200M/TISP8201M combination has been designed to protect  
dual polarity supply rail monolithic SLICs (Subscriber Line Interface  
Circuits) against overvoltages on the telephone line caused by lightning,  
a.c. power contact and induction. Protection against negative  
overvoltages is given by the TISP8200M. Protection against positive  
overvoltages is given by the TISP8201M. Both parts are in 8-pin small-  
outline surface mount packages.  
2
3
4
K
NC  
MDRXALC  
NC - No internal connection  
The TISP8200M has an array of two buffered P-gate SCRs with a  
common anode connection. Each SCR cathode and gate has a separate  
terminal connection. The NPN buffer transistors reduce the gate supply  
current.  
TISP8201M Device Symbol  
A1  
G1  
In use, the cathodes of the TISP8200M SCRs are connected to the two  
conductors of the POTS line (see applications information). The gates are  
connected to the appropriate negative voltage battery feed of the SLIC  
driving the line conductor pair. This ensures that the TISP8200M  
protection voltage tracks the SLIC negative supply voltage. The anode of  
the TISP8200M is connected to the SLIC common.  
K
K
G2  
A2  
SDRXAKB  
How To Order  
For Standard  
For Lead Free  
Termination Finish Termination Finish  
Device  
Package  
Carrier  
Order As  
Order As  
TISP8200M  
TISP8201M  
D (8-pin Small-Outline)  
D (8-pin Small-Outline)  
Embossed Tape Reeled  
Embossed Tape Reeled  
TISP8200MDR  
TISP8201MDR  
TISP8200MDR-S  
TISP8201MDR-S  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
MAY 1998 - REVISED FEBRUARY 2005  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234567...13

中文翻译

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TISP8200MDR-S 替代型号

型号 品牌 替代类型 描述 数据表
TISP8200MDR BOURNS

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