Datasheet > TISP83121D

TISP83121D

更新时间： 2024-11-04 22:42:15

品牌	Logo	应用领域
POINN		光电二极管栅
页数	文件大小	规格书
7页	134K
描述
DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR

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技术参数
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TISP83121D 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Is Samacsys：	N	认证状态：	Not Qualified
触发设备类型：	SILICON SURGE PROTECTOR	Base Number Matches：	1

TISP83121D 数据手册

TISP83121D

DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR

FEBRUARY 1999

OVERVOLTAGE PROTECTION FOR DUAL-VOLTAGE RINGING SLICS

●

Programmable Protection Configurations up

to ±100 V

D PACKAGE

(TOP VIEW)

Typically 5 Lines Protected by Two

TISP83121D + Diode Steering Networks

High Surge Current

- 150 A 10/1000 µs

- 150 A 10/700 µs

- 500 A 8/20 µs

MD6XAYA

For operation at the rated current values connect

pins 1, 4, 5 and 8 together.

●

Pin compatible with the LCP3121

- Functional Replacement in Diode Steering

Network Applications

device symbol

- 50% more surge current

Small Outline Surface Mount Package

- Available Ordering Options

CARRIER

Tube

PART #

TISP83121D

TISP83121DR

Taped and reeled

description

The TISP83121D is a dual-gate reverse-blocking

unidirectional thyristor designed for the

protection of dual-voltage ringing SLICs

(Subscriber Line Interface Circuits) against

overvoltages on the telephone line caused by

lightning, a.c. power contact and induction.

SD6XAKA

supply from being shorted when the

TISP83121D crowbars.

Under low level power cross conditions the

TISP83121D gate current will charge the gate

reference supply. If the reference supply cannot

absorb the charging current its potential will

increase, possibly to damaging levels. To avoid

excessive voltage levels a clamp (zener or

avalanche breakdown diode) may be added in

shunt with the supply. Alternatively, a grounded

collector emitter-follower may be used to reduce

the charging current by the transistors H_FEvalue.

The device chip is a four-layer NPNP silicon

thyristor structure which has an electrode

connection to every layer. For negative

overvoltage protection the TISP83121D is used

in a common anode configuration with the

voltage to be limited applied to the cathode (K)

terminal and the negative reference potential

applied to the gate 1 (G1) terminal. For positive

overvoltage protection the TISP83121D is used

in a common cathode configuration with the

voltage to be limited applied to the anode (A)

terminal and the positive reference potential

applied to the gate 2 (G2) terminal.

This monolithic protection device is made with a

ion-implanted epitaxial-planar technology to give

a consistent protection performance and be

virtually transparent to the system in normal

operation.

The TISP83121D is a unidirectional protector

and to prevent reverse bias, requires the use of a

series diode between the protected line

conductor and the protector. Further, the gate

reference

supply

voltage

requires

appropriately poled series diode to prevent the

P R O D U C T I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7

中文翻译

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与TISP83121D相关器件

型号	品牌	获取价格	描述	数据表
TISP83121DR	POINN	获取价格	DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
TISP83121DR	BOURNS	获取价格	Silicon Surge Protector, 22A, MS-012AA, SOIC-8
TISP83121DR-S	BOURNS	获取价格	Silicon Surge Protector, 22A, ROHS COMPLIANT, SOIC-8
TISP83121D-S	BOURNS	获取价格	Silicon Surge Protector, 22A, ROHS COMPLIANT, SOIC-8
TISP9110LDM	BOURNS	获取价格	INTEGRATED COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
TISP9110LDM_07	BOURNS	获取价格	Overvoltage Protector
TISP9110LDMR-S	BOURNS	获取价格	INTEGRATED COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
TISP9110LDMR-S_11	BOURNS	获取价格	SLIC Protection
TISP9110MDMR-S	BOURNS	获取价格	Surge Protection Circuit, PDSO8, ROHS COMPLIANT, SOIC-8
TISP9180	TI	获取价格	180V, 15A, SILICON SURGE PROTECTOR

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